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Infineon CoolMOS P7 N-Channel MOSFET & Diode, 4 A, 950 V Enhancement, 3-Pin TO-251 IPU95R2K0P7AKMA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 6.22mm
Length 6.73mm
Model IPU95R2K0P7AKMA1
Width 2.41mm
Mount Type Through Hole
Series CoolMOS P7
Maximum Operating Temperature 150°C
Package Type TO-251
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 4A
Maximum Drain Source Voltage Vds 950V
Maximum Drain Source Resistance Rds 2Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 37W
Typical Gate Charge Qg @ Vgs 10nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 900mV

Key Features

  • Designed for high voltage applications with 950 V maximum drain-source voltage.
  • Supports continuous drain current of 4 A for reliable performance.
  • Enhanced channel mode with low maximum drain-source resistance of 2Ω.
  • Integrated Zener diode for ESD protection to improve robustness.
  • Capable of dissipating 37 W power with operation up to 150°C temperature.
  • Compact TO-251 3-pin through-hole mounting package.
  • Typical gate charge of 10 nC facilitates efficient drive.
  • Maximum gate-source voltage rating of 20 V ensures stable switching.

Product Description

Infineon IPU95R2K0P7AKMA1 CoolMOS P7 N-Channel MOSFET & Diode is a high-performance semiconductor device designed for efficient power switching in electronic circuits. With a maximum continuous drain current of 4 A and a maximum drain-source voltage of 950 V, this enhancement mode MOSFET is optimized for use in low-power switched-mode power supplies (SMPS), industrial, and consumer electronics.

This device features the latest CoolMOS P7 technology that offers superior efficiency, thermal performance, and ease of use. Compared to its predecessor, it provides an enhanced blocking voltage rating and improved ESD robustness through an integrated Zener diode, which helps reduce yield loss and simplifies circuit protection design.

The IPU95R2K0P7AKMA1 has a low maximum drain-source resistance (Rds(on)) of 2Ω and a typical gate charge (Qg) of only 10 nC, resulting in reduced switching losses and better overall performance. It is housed in a compact 3-pin TO-251 package designed for through-hole mounting, providing ease of installation in various PCB layouts.

This MOSFET additionally supports a maximum power dissipation of 37 W and has a wide operating temperature range from -55°C up to 150°C, suitable for demanding industrial and electronic environments. Its typical forward diode voltage is 900 mV, which integrates diode functionality within the MOSFET for efficient circuit operation.

Applications include industrial electronics, power management systems, renewable energy solutions, and other electronic designs requiring reliable and efficient switching components with high voltage and current handling capabilities.

Designed for high voltage applications up to 950 V. Supports steady continuous drain current of 4 A for reliable system operation. Low on-resistance channel improves energy efficiency and thermal management. Integrated Zener diode offers robust ESD protection up to Class 2 (HBM).

Compact TO-251 package enables multiple mounting configurations. Wide operating temperature span from -55°C to 150°C suits industrial use. Optimized gate charge and voltage rating reduce switching losses. Enhancement mode for easy drive and control in power supply applications.

Ideal for use in consumer electronics, industrial controls, and power supplies. Explore the extensive range of MOSFETs and semiconductor components at EnvMart for advanced industrial and electronic solutions.

Infineon CoolMOS P7 N-Channel MOSFET & Diode, 4 A, 950 V Enhancement, 3-Pin TO-251 IPU95R2K0P7AKMA1
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Frequently Asked Questions

The maximum continuous drain current for this model is 4 A.

This MOSFET has a maximum drain-source voltage rating of 950 V.

It can dissipate a maximum power of 37 W.

The operating temperature range for this MOSFET is from -55°C to 150°C.

This model is housed in a TO-251 package and is designed for through-hole mounting.

The maximum gate-source voltage rating for this MOSFET is 20 V.

It has a typical gate charge of 10 nC.

The maximum drain-source resistance (Rds(on)) is 2Ω.

Yes, it features an integrated Zener diode for ESD protection.

It is suitable for industrial electronics, power management systems, and renewable energy solutions.

The typical forward voltage of the integrated diode is 900 mV.

This model features an N-channel enhancement mode.

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