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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 6.22mm |
| Length | 6.73mm |
| Model | IPU95R2K0P7AKMA1 |
| Width | 2.41mm |
| Mount Type | Through Hole |
| Series | CoolMOS P7 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-251 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 4A |
| Maximum Drain Source Voltage Vds | 950V |
| Maximum Drain Source Resistance Rds | 2Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 37W |
| Typical Gate Charge Qg @ Vgs | 10nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 900mV |
Infineon IPU95R2K0P7AKMA1 CoolMOS P7 N-Channel MOSFET & Diode is a high-performance semiconductor device designed for efficient power switching in electronic circuits. With a maximum continuous drain current of 4 A and a maximum drain-source voltage of 950 V, this enhancement mode MOSFET is optimized for use in low-power switched-mode power supplies (SMPS), industrial, and consumer electronics.
This device features the latest CoolMOS P7 technology that offers superior efficiency, thermal performance, and ease of use. Compared to its predecessor, it provides an enhanced blocking voltage rating and improved ESD robustness through an integrated Zener diode, which helps reduce yield loss and simplifies circuit protection design.
The IPU95R2K0P7AKMA1 has a low maximum drain-source resistance (Rds(on)) of 2Ω and a typical gate charge (Qg) of only 10 nC, resulting in reduced switching losses and better overall performance. It is housed in a compact 3-pin TO-251 package designed for through-hole mounting, providing ease of installation in various PCB layouts.
This MOSFET additionally supports a maximum power dissipation of 37 W and has a wide operating temperature range from -55°C up to 150°C, suitable for demanding industrial and electronic environments. Its typical forward diode voltage is 900 mV, which integrates diode functionality within the MOSFET for efficient circuit operation.
Applications include industrial electronics, power management systems, renewable energy solutions, and other electronic designs requiring reliable and efficient switching components with high voltage and current handling capabilities.
Designed for high voltage applications up to 950 V. Supports steady continuous drain current of 4 A for reliable system operation. Low on-resistance channel improves energy efficiency and thermal management. Integrated Zener diode offers robust ESD protection up to Class 2 (HBM).
Compact TO-251 package enables multiple mounting configurations. Wide operating temperature span from -55°C to 150°C suits industrial use. Optimized gate charge and voltage rating reduce switching losses. Enhancement mode for easy drive and control in power supply applications.
Ideal for use in consumer electronics, industrial controls, and power supplies. Explore the extensive range of MOSFETs and semiconductor components at EnvMart for advanced industrial and electronic solutions.
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