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Infineon OptiMOS N-Channel MOSFET 88 A 200 V Enhancement Mode 3-Pin TO-263 IPB107N20N3GATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 4.57mm |
| Length | 10.31mm |
| Model | IPB107N20N3GATMA1 |
| Width | 9.45mm |
| Mount Type | Surface |
| Series | OptiMOS |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 88A |
| Maximum Drain Source Voltage Vds | 200V |
| Maximum Drain Source Resistance Rds | 11mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 300W |
| Typical Gate Charge Qg @ Vgs | 65nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Key Features
- OptiMOS series offers high efficiency and low on-resistance performance.
- 3-pin surface mount TO-263 package suitable for compact PCB designs.
- Low gate charge of 65 nC ensures fast switching capabilities.
- Maximum power dissipation of 300 W enhances thermal reliability.
- AEC-Q101 automotive qualification ensures high quality standards.
- Wide operating temperature from -55°C to 175°C supports diverse industrial applications.
- Maximum drain-source resistance of 11 mΩ reduces conduction losses.
- Forward voltage drop of 1.2 V optimizes power efficiency.
Product Description
Infineon IPB107N20N3GATMA1 is a high-performance OptiMOS N-Channel MOSFET designed for efficient power switching applications. This semiconductor device supports a maximum continuous drain current of 88 A with a drain-source voltage rating of 200 V, making it suitable for a wide range of industrial, automotive, and electronic circuit applications. Packaged in a 3-pin TO-263 surface mount configuration, it offers compactness and effective thermal management.
The OptiMOS series by Infineon is known for delivering best-in-class efficiency and low conduction losses, with a maximum drain-source resistance of only 11 mΩ. The device features a typical gate charge of 65 nC at a gate-source voltage of 10 V, enabling fast switching speeds which are critical for high-frequency operations.
This MOSFET operates reliably across a wide temperature range from -55°C to 175°C, adhering to the rigorous AEC-Q101 automotive standard suitable for automotive and harsh environment applications. The forward voltage drop of 1.2 V under standard test conditions further enhances overall power efficiency.
Its three-pin design and surface mount technology facilitate easy integration into printed circuit boards, supporting modern compact designs in power electronics. The device’s robust construction and optimized performance make it ideal for power management, DC-DC converters, motor drives, and other power switching requirements in industrial and automotive sectors.
OptiMOS series MOSFET with 88 A maximum continuous drain current. 200 V maximum drain-source voltage rating. Low on-resistance of 11 mΩ ensures minimal conduction losses. High maximum power dissipation of 300 W for enhanced thermal performance.
Typical gate charge of 65 nC for rapid switching. Wide operating temperature range: -55°C to 175°C. AEC-Q101 automotive qualification for durability and reliability. Compact 3-pin TO-263 surface mount package for efficient PCB integration.
Suitable for industrial, automotive, and power electronics applications. Explore the complete range of Infineon MOSFETs in the semiconductor category to find ideal solutions for your power switching needs.
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Frequently Asked Questions
The maximum continuous drain current of this model is 88 A.
This MOSFET has a maximum drain-source voltage rating of 200 V.
The typical gate charge at a gate-source voltage of 10 V is 65 nC.
It supports a maximum power dissipation of 300 W, enhancing thermal reliability.
The maximum drain-source resistance is 11 mΩ, which helps reduce conduction losses.
The dimensions of the TO-263 package are 10.31 mm in length, 9.45 mm in width, and 4.57 mm in height.
This model operates reliably across a wide temperature range from -55°C to 175°C.
It complies with the AEC-Q101 automotive qualification standard.
The forward voltage drop under standard test conditions is 1.2 V, optimizing power efficiency.
This device features an N-channel enhancement mode.
The TO-263 package has 3 pins, facilitating easy integration into printed circuit boards.
It is suitable for power management, DC-DC converters, motor drives, and other power switching applications in industrial and automotive sectors.
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