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Toshiba N-Channel MOSFET 20A 250V Enhancement TO-220 Package TK20A25D,S5X(J)
Specifications
| Country of Origin | Japan |
|---|---|
| Brand | Toshiba |
| Height | 15mm |
| Length | 10mm |
| Model | TK20A25D,S5X(J |
| Width | 4.5mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 20A |
| Maximum Drain Source Voltage Vds | 250V |
| Maximum Drain Source Resistance Rds | 100mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 45W |
| Typical Gate Charge Qg @ Vgs | 55nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | -1.7V |
Key Features
- Features N-channel operation with a 20A maximum continuous drain current.
- Supports up to 250V drain-source voltage for high-voltage applications.
- Enhancement mode operation ensures efficient switching performance.
- TO-220 package design with 3 pins provides versatile mounting.
- Maximum power dissipation of 45W suitable for demanding loads.
- Low drain-source resistance of 100mΩ improves efficiency and reduces heat.
- Operates reliably between -55°C and 150°C ambient temperatures.
- Supports up to 20V gate-source voltage for robust control.
Product Description
Toshiba TK20A25D,S5X(J) N-Channel MOSFET is an industrial-grade discrete semiconductor component designed to provide high efficiency and reliable performance in power switching and amplification applications. This enhancement-mode device handles a maximum continuous drain current of 20A and withstands up to 250V drain-source voltage, making it suitable for high-power electronic circuits and demanding environments.
Its TO-220 package with through-hole mounting allows for straightforward integration and secure installation onto PCBs or heatsinks, commonly used in industrial, automotive, and laboratory systems. The MOSFET has a channel mode set to enhancement, ensuring fast and precise switching, and comes equipped with three pins to facilitate easy wiring.
With a maximum power dissipation of 45W, this unit can drive significant loads, and its low drain-source resistance of 100mΩ offers efficiency by minimizing internal losses. It is also built to operate in extended temperature ranges, from -55°C to 150°C, allowing for reliable function in both cold and hot environments.
The device supports a maximum gate-source voltage of 20V and provides a typical gate charge of 55nC, giving designers flexibility in signal control schemes and compatibility with standard gate drivers. Application areas include industrial power switching, motor drives, uninterruptible power supplies, instrumentation, and high-reliability control circuits.
Designed by Toshiba and originating from Japan, this MOSFET is engineered for quality and consistent results, conforming to modern standards and requirements for electronic components. It is not automotive certified, but its performance meets the expectations of general industrial and commercial installations requiring robust and efficient MOSFET switching.
Choose Toshiba MOSFETs for assured performance in critical applications. Explore more N-channel MOSFET and semiconductor devices for your industrial and electronics projects with EnvMart.
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Frequently Asked Questions
The Toshiba TK20A25D,S5X(J) has a maximum continuous drain current of 20A.
It can withstand up to 250V drain-source voltage, making it suitable for high-voltage applications.
This model comes in a TO-220 package with a through-hole mounting style.
It operates reliably between -55°C and 150°C ambient temperatures.
The maximum power dissipation is 45W, suitable for demanding loads.
It features a low drain-source resistance of 100mΩ, which helps improve efficiency.
The typical gate charge at Vgs is 55nC, providing flexibility in signal control schemes.
It supports a maximum gate-source voltage of 20V.
This model has a total of 3 pins for easy wiring and integration.
It utilizes an N-channel type, which is common for enhancement mode operation.
This MOSFET is suitable for industrial power switching, motor drives, and uninterruptible power supplies, among other applications.
The dimensions are 15mm in height, 10mm in length, and 4.5mm in width.
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