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DiodesZetex N-Channel MOSFET 68.8A 100V Enhancement TO-252 Surface Mount 4-Pin DMT10H010LK3-13
Specifications
| Country of Origin | China |
|---|---|
| Brand | DiodesZetex |
| Height | 2.29mm |
| Length | 6.58mm |
| Model | DMT10H010LK3-13 |
| Width | 6.1mm |
| Mount Type | Surface |
| Series | DMT |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 68.8A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 11.3mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 62.5W |
| Typical Gate Charge Qg @ Vgs | 53.7nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.3V |
Key Features
- High current capacity of up to 68.8A for demanding power applications.
- Rated for 100V maximum drain-source voltage providing flexibility in switching designs.
- Low drain-source resistance of 11.3mΩ enhances efficiency and minimizes power loss.
- Features 4-pin TO-252 package for surface mount compatibility in compact circuit designs.
- Operates from −55°C up to 175°C for reliable performance in various environments.
- Enhancement mode for precise and efficient switching characteristics.
- Maximum gate-source voltage of 20V ensures robust input control range.
- Forward voltage drop of 1.3V and typical gate charge of 53.7nC for efficient MOSFET operation.
Product Description
The DiodesZetex DMT10H010LK3-13 is a high-performance N-Channel MOSFET designed to handle high current loads up to 68.8A with a maximum drain-source voltage of 100V, making it a versatile solution for power electronics and switching circuit designs. With its enhancement mode operation, this MOSFET is ideally suited for switching applications requiring precise control and fast response times.
Housed in a robust 4-pin TO-252 surface mount package, the DMT10H010LK3-13 integrates easily onto PCBs for high-density or compact layouts. Its low drain-source resistance of 11.3mΩ ensures minimized conduction losses, resulting in higher efficiency and lower thermal output, which are critical for power management and conversion in industrial designs.
The device is engineered to support a wide operating temperature range from −55°C to +175°C, ensuring dependable performance in demanding industrial, automotive, and commercial settings. Its wide gate-source voltage range, rated up to 20V, offers enhanced protection against voltage spikes while allowing for various gate drive circuit configurations.
With a typical gate charge of 53.7nC and a forward voltage drop of 1.3V, this MOSFET balances fast switching performance with efficient energy use. Its well-designed thermal and electrical parameters make it suitable for DC-DC converters, power supplies, motor drivers, and high-efficiency switching regulators.
The DMT10H010LK3-13 is not specified for automotive standards, making it a reliable choice for general industrial and commercial purposes. Its compact footprint makes it suitable for space-constrained applications, while its advanced silicon structure enables high reliability.
Typical applications include use in high-power industrial equipment, power management systems, laboratory test systems, motor control units, switching power supplies, and embedded electronics where robust and efficient MOSFET functions are essential.
For more options in high-performance MOSFETs, explore the wide category selection available for MOSFET and power semiconductor solutions on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 68.8A, making it suitable for high current applications.
This MOSFET has a maximum drain-source voltage rating of 100V, allowing for flexibility in various switching designs.
It is housed in a TO-252 package, which is designed for surface mount applications.
The operating temperature range for this MOSFET is from -55°C to +175°C, ensuring reliable performance in diverse environments.
The typical gate charge for the DMT10H010LK3-13 is 53.7nC, which contributes to its efficient operation.
The forward voltage drop of this MOSFET is 1.3V, which is important for efficient energy use in applications.
It features a low drain-source resistance of 11.3mΩ, enhancing efficiency and minimizing power loss.
The maximum gate-source voltage for this unit is 20V, providing robust input control range.
This MOSFET has a pin count of 4, suitable for compact circuit designs.
It features an N-channel type, which is typical for enhancement mode MOSFETs used in switching applications.
The maximum power dissipation for the DMT10H010LK3-13 is 62.5W, making it suitable for high power applications.
This model is suitable for applications such as DC-DC converters, power supplies, and motor drivers, where efficient switching is essential.
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