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Nexperia N-Channel MOSFET 184A, 55V, LFPAK, Enhancement, 5-Pin BUK9Y19
Specifications
| Country of Origin | Philippines |
|---|---|
| Brand | Nexperia |
| Height | 1.05mm |
| Length | 5mm |
| Model | BUK9Y19 |
| Width | 4.1mm |
| Mount Type | Surface |
| Series | BUK9Y19 |
| Maximum Operating Temperature | 175°C |
| Package Type | LFPAK |
| Minimum Operating Temperature | -55°C |
| Pin Count | 5 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 184A |
| Maximum Drain Source Voltage Vds | 55V |
| Maximum Drain Source Resistance Rds | 40mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 85W |
| Typical Gate Charge Qg @ Vgs | 18nC |
| Maximum Gate Source Voltage Vgs | 15V |
Key Features
- Provides a maximum continuous drain current of 184A for demanding power circuits.
- Operates at a maximum drain source voltage of 55V, suitable for automotive and motor control environments.
- Uses an enhancement-mode design with low on-state resistance of 40mΩ for efficient switching.
- Packaged in a space-saving LFPAK, 5-pin surface-mount format for flexible PCB integration.
- Rated for high thermal endurance up to 175°C; ideal for harsh temperature requirements.
- Compliant with AEC-Q101 automotive standards ensuring critical system performance.
- Designed specifically for applications like power steering, engine management, lighting, and general purpose power switching.
- Features logic level compatibility and TrenchMOS technology for low gate charge and fast operation.
Product Description
Nexperia BUK9Y19-55B,115 is a high-performance N-channel enhancement mode MOSFET engineered for demanding automotive and industrial power applications. This device boasts a maximum drain current of 184A and a drain-source voltage rating of 55V, making it suitable for handling substantial loads in automotive systems such as electric power steering, engine management, integrated starter generators, transmission control, and automotive lighting.
The MOSFET is built using advanced TrenchMOS technology and offers low on-state resistance, which significantly reduces conduction losses and improves energy efficiency. Its 5-pin LFPAK surface-mount package allows for compact installation and optimal thermal management, while the device's maximum operating temperature of 175°C enables reliable performance in thermally challenging environments. Compliance with AEC-Q101 automotive standards ensures that it meets stringent requirements for safety and performance in critical applications.
Designed with logic-level gate drive compatibility, the BUK9Y19-55B,115 facilitates easy integration into modern control circuits. The typical gate charge is just 18nC at Vgs, allowing for fast operation and lower switching losses. With a maximum power dissipation of 85W, the device can sustain considerable heat loading during continuous operation.
This MOSFET's compact form factor (5mm length, 4.1mm width, and 1.05mm height) contributes to efficient PCB design and flexibility. Its rugged construction and surface mount capability enhance reliability and simplify automated assembly processes. Applications extend beyond automotive systems into industrial machinery, motor drives, lamps, and solenoid actuation, supporting consistent power switching and robust operation.
Key technical highlights include an enhancement-mode channel, low on-state resistance (40mΩ), automotive-standard qualification, and operation across a wide temperature range (-55°C to +175°C). The 5-pin count and surface-mount design further ensure easy handling in both prototyping and production environments.
Maximum continuous drain current: 184A. Drain-source voltage rating: 55V. Low Rds(on): 40mΩ. LFPAK surface-mount package, 5-pin. High thermal endurance: up to 175°C. Automotive standard: AEC-Q101 compliant. automotive, industrial motor, lamps, power switching.
Browse other Nexperia automotive-grade MOSFETs and related semiconductor devices for power, switching, and control on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 184A, making it suitable for demanding power circuits.
It has a maximum drain-source voltage rating of 55V, suitable for various automotive applications.
The on-state resistance (Rds(on)) of this MOSFET is 40mΩ, which helps in reducing conduction losses.
The LFPAK package has dimensions of 5mm in length, 4.1mm in width, and 1.05mm in height.
This model operates within a temperature range of -55°C to 175°C, allowing it to function in harsh environments.
Yes, it is compliant with AEC-Q101 automotive standards, ensuring it meets stringent safety and performance requirements.
The typical gate charge (Qg) at Vgs is 18nC, facilitating fast operation and lower switching losses.
This model has a maximum power dissipation rating of 85W, allowing it to handle considerable heat during operation.
It uses an enhancement-mode N-channel design, which is common for efficient switching applications.
This MOSFET is designed for automotive applications such as power steering, engine management, and general-purpose power switching.
The BUK9Y19 features a 5-pin configuration, suitable for surface mounting on PCBs.
The maximum gate-source voltage (Vgs) for this MOSFET is 15V, which is important for ensuring proper operation in circuits.
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