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Infineon N-Channel Power MOSFET 100A, 100V, 3.5mΩ TDSON, Surface Mount, 8-Pin, Enhancement Mode BSC035N10NS5
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.1mm |
| Length | 5.49mm |
| Model | BSC035N10NS5 |
| Width | 6.35mm |
| Mount Type | Surface |
| Series | BSC035N10NS5 |
| Maximum Operating Temperature | 150°C |
| Package Type | TDSON |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | None specified |
| Pin Count | 8 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 100A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 3.5mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 156W |
| Typical Gate Charge Qg @ Vgs | 70nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 0.82V |
Key Features
- Maximum continuous drain current of 100A for robust power handling.
- Rated for 100V drain-source voltage suitable for industrial and high-power circuits.
- Low drain-source resistance of 3.5mΩ enhances efficiency by reducing losses.
- Surface mount TDSON 8-pin package enables compact integration and improved thermal performance.
- Enhancement mode device suitable for high-frequency switching and synchronous rectification.
- Typical gate charge of 70nC at Vgs, allowing fast switching operation.
- Can dissipate up to 156W of power under maximum operating conditions.
- Wide operating temperature range from -55°C to +150°C for reliability in diverse environments.
Product Description
The Infineon BSC035N10NS5ATMA1 is a high-efficiency, N-channel enhancement mode power MOSFET engineered for demanding power electronics and industrial switching applications. Featuring a maximum continuous drain current of 100A and a drain-source voltage rating of 100V, this device enables robust power management and reliable switching behavior in circuits requiring high-current capability and efficient power delivery.
This MOSFET utilizes a low drain-source resistance (Rds(on)) of just 3.5mΩ, which minimizes conduction losses and increases overall energy efficiency, especially in high-frequency switching contexts. Its advanced TDSON surface-mount package with 8 pins optimizes compact board layouts and enhances thermal dissipation, making it well suited for dense designs where space and heat management are crucial.
The BSC035N10NS5ATMA1 is specifically tailored for synchronous rectification and high-speed switching, supported by a typical gate charge (Qg) of 70nC at Vgs for rapid on-off cycles. The device operates in enhancement mode, providing precise control suitable for applications such as power supplies, DC-DC converters, synchronous rectifiers, and motor drives.
Thermal performance is optimized with a maximum power dissipation rating of 156W and an operational temperature range spanning -55°C to +150°C, ensuring reliability in various industrial and environmental conditions. The MOSFET’s 8-pin format and surface-mount capability allow for easy assembly onto modern PCBs, supporting automated manufacturing and high-density board layouts.
Key use cases include industrial automation systems, advanced power management circuits, high-current DC-DC conversion, power supply modules, data center hardware, and automotive electronics not requiring specific automotive certifications. Its robust electrical characteristics make it a versatile solution for engineers designing efficient power delivery and switching systems.
Browse more high-performance MOSFETs and Infineon power solutions in the Semiconductor category on EnvMart for applications in electronics manufacturing, industrial controls, and embedded systems.
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Frequently Asked Questions
The maximum continuous drain current for this model is 100A, making it suitable for robust power handling in high-current applications.
This MOSFET is rated for a drain-source voltage of 100V, which is suitable for various industrial and high-power circuits.
It has a low drain-source resistance of 3.5mΩ, which enhances efficiency by reducing conduction losses.
The typical gate charge at Vgs is 70nC, allowing for fast switching operation in applications.
This MOSFET can dissipate up to 156W of power under maximum operating conditions, ensuring reliable performance.
The TDSON package dimensions are 5.49mm in length, 6.35mm in width, and 1.1mm in height.
The operating temperature range for this model spans from -55°C to +150°C, ensuring reliability in diverse environments.
It utilizes a surface mount design, which allows for compact integration and improved thermal performance.
This model features an N-channel type, suitable for enhancement mode applications.
It is suitable for applications such as power supplies, DC-DC converters, synchronous rectifiers, and motor drives.
The maximum gate-source voltage for this MOSFET is 20V, which is critical for ensuring proper operation within specified limits.
There are no specific standards or approvals mentioned for this MOSFET.
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