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Nexperia N-Channel Enhancement MOSFET 17A 60V LFPAK Surface Mount 4-Pin BUK9M5360E
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Height | 0.9mm |
| Length | 3.4mm |
| Model | BUK9M5360E |
| Width | 2.6mm |
| Mount Type | Surface |
| Series | BUK9M5360E |
| Maximum Operating Temperature | 175°C |
| Package Type | LFPAK |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 17A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 120mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 36W |
| Typical Gate Charge Qg @ Vgs | 6nC |
| Maximum Gate Source Voltage Vgs | 10V |
| Forward Voltage Vf | 1.2V |
Key Features
- Maximum continuous drain current of 17A enables robust power handling.
- Rated for a drain-source voltage of 60V for demanding environments.
- Low drain-source resistance of 120mΩ ensures efficiency in power circuits.
- Surface-mount LFPAK package with 4 pins facilitates compact board layouts.
- Enhancement mode operation offers true logic-level gate control.
- Thermally resilient with a maximum operating temperature of 175°C.
- AEC-Q101 automotive standard compliant, suitable for vehicle systems.
- Gate charge of 6nC allows fast switching response in control circuits.
Product Description
The Nexperia BUK9M5360E MOSFET is engineered to deliver high reliability and performance in automotive and industrial power switching circuits. Featuring an N-channel enhancement mode, this device supports logic-level gate control and is qualified to the AEC-Q101 automotive standard.
With a continuous drain current capability of up to 17A and a drain-source voltage rating of 60V, it is well-suited for applications involving motors, lamps, solenoids, and transmission control. The low drain-source resistance (Rds of 120mΩ) enhances energy efficiency by minimizing power losses during operation.
This MOSFET comes in a compact surface-mount LFPAK 4-pin package, helping to simplify circuit board design and assembly. The typical gate charge of 6nC at Vgs ensures swift response times, making it ideal for high-performance switching.
Thermal stability is a key feature, with maximum operating temperatures up to 175°C. The device is also repetitive avalanche rated, providing ruggedness for demanding environments.
Designers can rely on the BUK9M5360E for use in 12V automotive systems, thanks to its true logic-level gate threshold of greater than 0.5V at 175°C. The MOSFET leverages advanced TrenchMOS technology, providing efficiency and reliability for thermally demanding scenarios.
Maximum continuous drain current: 17A. Drain-source voltage: 60V. Drain-source resistance: 120mΩ. Enhancement mode logic-level gate control. LFPAK 4-pin surface-mount package. AEC-Q101 automotive compliance. Operating temperature up to 175°C.
Fast gate charge: 6nC. Common industrial and automotive applications include motor drives, power switching, lamp or solenoid control, and transmission control systems. Discover more Nexperia MOSFETs and power components in the Semiconductor category at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 17A.
It is rated for a drain-source voltage of 60V.
The drain-source resistance is 120mΩ, which helps enhance energy efficiency.
This model comes in a compact LFPAK surface-mount package with 4 pins.
The maximum operating temperature is 175°C.
It complies with the AEC-Q101 automotive standard, making it suitable for vehicle systems.
The typical gate charge is 6nC at Vgs, allowing for fast switching response.
The minimum operating temperature is -55°C.
The dimensions are 3.4mm in length, 2.6mm in width, and 0.9mm in height.
It features an N-channel enhancement mode.
It is suitable for applications such as motor drives, power switching, lamp or solenoid control, and transmission control systems.
The maximum gate-source voltage is 10V.
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