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Toshiba N-Channel MOSFET 8A 60V Enhancement TO-252 TK8S06K3L
Specifications
| Country of Origin | Japan |
|---|---|
| Brand | Toshiba |
| Height | 2.3mm |
| Length | 6.5mm |
| Model | TK8S06K3L |
| Width | 7mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 8A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 80mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 25W |
| Typical Gate Charge Qg @ Vgs | 10nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | -1.2V |
Key Features
- Type N-channel MOSFET suitable for power switching applications.
- Maximum continuous drain current rated at 8A for robust performance.
- Maximum drain source voltage of 60V supports high-voltage operation.
- Enhancement mode with low on-resistance and minimal leakage current.
- TO-252 3-pin package optimised for efficient thermal dissipation.
- Automotive-grade standard AEC-Q101 ensures reliability in demanding environments.
- Wide operating temperature range from -55°C to 175°C.
- Surface mount configuration enables integration in modern PCBs.
Product Description
Toshiba TK8S06K3L N-Channel MOSFET is a high-performance power component engineered for industrial and automotive applications. It delivers continuous drain current up to 8A and withstands maximum drain-source voltage up to 60V, making it suitable for DC-DC converters, switching voltage regulators, and motor driver circuits.
This enhancement mode MOSFET benefits from a low on-resistance of 43 mΩ (typical, VGS = 10V), contributing to efficient power management and reduced heat generation. Leakage current is minimised to 10 μA (IDSS, max, VDS = 60V), supporting stability in sensitive electronic environments. The device is housed in a compact TO-252 package featuring three surface-mount pins, enabling straightforward integration with contemporary PCB layouts.
With a typical gate charge of just 10nC, switching operations are fast and precise, reducing power losses during transition cycles. The MOSFET withstands gate-source voltages up to 20V and can dissipate up to 25W of power. Its wide operating temperature range from -55 to 175°C allows for deployment in harsh industrial and automotive environments.
Certified to the automotive standard AEC-Q101, the TK8S06K3L meets stringent reliability requirements for motor-driving, switching regulator, and automotive power conversion systems. Dimensional parameters are optimised for heat management, with a length of 6.5mm, width of 7mm, and height of 2.3mm to balance compactness and thermal efficiency in assembly.
The MOSFET's enhancement mode operation (Vth = 2.0 - 3.0V) allows for precise voltage-controlled gating, beneficial for circuits requiring high-efficiency switching. Forward voltage is specified at -1.2V, further supporting stable reverse current protection.
Type N-channel configuration ideal for industrial, automotive, and electronics power control. Use cases include DC-DC conversions, switching voltage regulation, and motor driving in manufacturing, laboratory, control systems, and automotive platforms.
Complies with strict standards for reliability, temperature tolerance, and performance, granting versatility in critical environments. Explore more advanced Toshiba MOSFETs and semiconductor solutions in the EnvMart Semiconductor category for your design and manufacturing requirements.
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Frequently Asked Questions
The maximum continuous drain current for this model is rated at 8A.
It can withstand a maximum drain-source voltage of 60V.
The typical on-resistance is 43 mΩ at a gate-source voltage of 10V.
This MOSFET is housed in a TO-252 package.
The operating temperature range is from -55°C to 175°C.
It has a maximum power dissipation capability of 25W.
It complies with the automotive standard AEC-Q101.
The typical gate charge is 10nC.
The dimensions are 6.5mm in length, 7mm in width, and 2.3mm in height.
The forward voltage is specified at -1.2V.
The maximum gate-source voltage is 20V.
This model is suitable for applications such as DC-DC converters, switching voltage regulators, and motor driver circuits.
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