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Toshiba 15 A NPN 230 V Single Transistor, TO-3P Package 2SC5200N(S1,E,S)

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Toshiba 15 A NPN 230 V Single Transistor, TO-3P Package 2SC5200N(S1,E,S)

Name: Toshiba 15 A NPN 230 V Single Transistor, TO-3P Package 2SC5200N(S1,E,S)
Brand: Toshiba
SKU: 385452
Price: 2.69 USD
Availability: InStock

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Category Power Transistors Brand Toshiba Condition New

Specifications

Country of Origin	China
Brand	Toshiba
Height	40.5mm
Length	15.5mm
Model	2SC5200N(S1,E,S)
Width	4.5mm
Mount Type	Through Hole
Series	2SC5200N
Maximum Operating Temperature	150°C
Package Type	TO-3P
Minimum Operating Temperature	-55°C
Pin Count	3
Maximum Collector Emitter Voltage Vceo	230V
Minimum DC Current Gain hFE	35
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	5V
Maximum Collector Base Voltage VCBO	230V
Maximum Power Dissipation Pd	150W
Maximum DC Collector Current Idc	15A
Transistor Configuration	Single
Maximum Transition Frequency ft	30MHz

Key Features

This transistor operates with a maximum power dissipation of 150 watts.
It has a maximum collector base voltage of 230 volts and an emitter base voltage of 5 volts.
The device supports a transition frequency up to 30 MHz suitable for high-frequency applications.
Designed for through-hole mount with a 3-pin TO-3P package configuration.
Operational temperature range from -55°C to 150°C ensures reliability in harsh industrial environments.
Minimum DC current gain of 35 ensures efficient amplification in power electronics circuits.

Product Description

Toshiba 2SC5200N(S1,E,S) is a high-power NPN transistor designed for applications demanding up to 15 amperes collector current and 230 volts collector-emitter voltage. It is enclosed in a robust TO-3P package with through-hole mounting, suitable for assembly in various power control and amplification devices.

This transistor offers a maximum power dissipation rating of 150 watts, enabling it to manage significant power loads effectively. With a maximum collector base voltage and collector-emitter voltage of 230 volts, it is ideal for medium-power switching and amplifier circuits.

The device features a minimum DC current gain (hFE) of 35, supporting reliable amplification performance. It provides a maximum transition frequency of 30 MHz, making it suitable for moderate-frequency electronic applications.

The temperature operating range spans from -55 to 150 degrees Celsius, ensuring dependable operation across industrial and commercial conditions. Its 3-pin configuration simplifies integration into electronic designs, while the TO-3P package provides heat dissipation and durability benefits.

This transistor is applicable for use in industrial electronics, power management circuits, audio amplifiers, and other semiconductor systems requiring robust NPN transistor characteristics.

This transistor operates with a maximum power dissipation of 150 watts. It has a maximum collector base voltage of 230 volts and an emitter base voltage of 5 volts. The device supports a transition frequency up to 30 MHz suitable for high-frequency applications.

Designed for through-hole mount with a 3-pin TO-3P package configuration. Operational temperature range from -55°C to 150°C ensures reliability in harsh industrial environments. Minimum DC current gain of 35 ensures efficient amplification in power electronics circuits.

Explore the full range of semiconductor components and Power Transistors at EnvMart for your electronic design and industrial automation needs.