World's First Climate Tech Platform | Free Delivery in India | Global Shipping

For Bulk Enquiry: sales@envmart.com

onsemi Power Transistor PNP -4 A, -80 V, 3-Pin TO-225 2N5195G

Free Delivery in India | Lowest Global Shipping Charges

onsemi Power Transistor PNP -4 A, -80 V, 3-Pin TO-225 2N5195G

Name: onsemi Power Transistor PNP -4 A, -80 V, 3-Pin TO-225 2N5195G
Brand: onsemi
SKU: 395627
Price: 0.63 USD
Availability: InStock



Category Power Transistors Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	27.73mm
Length	7.8mm
Model	2N5195G
Width	3mm
Mount Type	Through Hole
Series	2N5195
Maximum Operating Temperature	150°C
Package Type	TO-225
Minimum Operating Temperature	-65°C
Pin Count	3
Maximum Collector Emitter Voltage Vceo	-80V
Minimum DC Current Gain hFE	20
Transistor Polarity	PNP
Maximum Emitter Base Voltage VEBO	5V
Maximum Collector Base Voltage VCBO	80V
Maximum Power Dissipation Pd	40W
Maximum DC Collector Current Idc	-4A
Transistor Configuration	Single
Maximum Transition Frequency ft	1MHz

Key Features

Featuring a 3-pin TO-225 package for through-hole mounting.
Offers maximum power dissipation of 40 W suitable for various power applications.
Operates reliably over a temperature range from -65°C to 150°C.
Has a minimum DC current gain (hFE) of 20 ensuring efficient transistor operation.
Maximum transition frequency of 1 MHz suitable for moderate frequency switching.
Transistor configured as a single PNP type providing polarity-specific electronic control.
Compact dimensions with height 27.73 mm, length 7.8 mm, and width 3 mm.
Maximum collector-base voltage rating of 80 V and emitter-base voltage of 5 V.

Product Description

onsemi 2N5195G Power Transistor PNP is a general purpose bipolar power transistor designed for medium power applications in electronics and electrical circuits. It features a robust TO-225 package with 3 pins suitable for through-hole mounting, ensuring ease of installation in power modules and circuit boards.

This transistor supports a maximum collector current of -4 Amperes and can sustain a maximum collector-emitter voltage of -80 Volts, making it suitable for various power switching and amplification tasks. The device also has a maximum power dissipation rating of 40 Watts, allowing it to handle considerable power without overheating.

The 2N5195G operates efficiently with a minimum DC current gain (hFE) of 20, providing reliable transistor gain performance in electronic circuits. With a transition frequency of up to 1 MHz, the transistor is capable of handling moderate switching frequencies and signal amplification applications.

Engineered to work over a wide temperature range from -65°C to 150°C, this transistor exhibits durability and reliability in harsh environmental and industrial conditions. Its compact dimensions - height 27.73 mm, length 7.8 mm, width 3 mm - facilitate integration into space-constrained designs.

This PNP configuration transistor is ideal for use in power supplies, amplifiers, motor control, and general purpose switching applications in industrial, automotive, and consumer electronics sectors.

3-Pin TO-225 package ensures robust physical and electrical connections through through-hole mounting. Maximum DC collector current rating of -4 A allows high load handling capability. Maximum power dissipation of 40 W supports demanding power applications.

Wide operating temperature range from -65°C to 150°C ensures stability in various climates. Compact, efficient device designed for use in automotive and industrial control systems. Explore more bipolar Power Transistors and electronic components at EnvMart for your industrial and commercial electrical engineering needs.

Looking to purchase in bulk?

Purchase item in bulk quantity
Get best price for your business

Comments (0)

No customer reviews for the moment.

Frequently Asked Questions

The maximum DC collector current rating of the 2N5195G is -4 Amperes, allowing it to handle significant load currents in various applications.

This model supports a maximum power dissipation of 40 Watts, making it suitable for demanding power applications without overheating.

The transistor operates reliably over a temperature range from -65°C to 150°C, ensuring stability in various environmental conditions.

The maximum transition frequency of the 2N5195G is 1 MHz, which is suitable for moderate frequency switching applications.

The compact dimensions of this model are height 27.73 mm, length 7.8 mm, and width 3 mm, facilitating integration into space-constrained designs.

The 2N5195G features a 3-pin TO-225 package designed for through-hole mounting, ensuring robust physical and electrical connections.

The minimum DC current gain (hFE) of the 2N5195G is 20, providing reliable transistor gain performance in electronic circuits.

The maximum collector-emitter voltage rating for this transistor is -80 Volts, allowing it to handle significant voltage levels in power applications.

The maximum emitter-base voltage (VEBO) for the 2N5195G is 5 Volts, which is crucial for its operation in various circuits.

This PNP transistor is suitable for power supplies, amplifiers, motor control, and general purpose switching applications in various sectors including industrial and automotive.

The maximum collector-base voltage (VCBO) rating for this model is 80 Volts, allowing it to be used in various power switching tasks.

The 2N5195G is configured as a single PNP type transistor, providing polarity-specific electronic control in circuits.