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onsemi PNP Power Transistor -3 A, -100 V, 3-Pin TO-252 Surface Mount NJVMJD32CT4G

Category Power Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 0.09mm
Length 6.73mm
Model NJVMJD32CT4G
Width 2.38mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type TO-252
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -100V
Minimum DC Current Gain hFE 25
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 100V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 15W
Maximum DC Collector Current Idc -3A
Transistor Configuration Single
Maximum Transition Frequency ft 1MHz
onsemi MJD32CT4G Transistor, 3 A PNP, 100 V, 3-Pin DPAKBrand onsemi

Key Features

  • Designed for surface mount applications with a TO-252 package type.
  • Maximum power dissipation rating of 15 W ensures reliable operation.
  • Wide operating temperature range from -65°C up to 150°C.
  • Meets automotive quality standards with AEC-Q101 qualification.
  • Features low minimum DC current gain of 25 for efficient amplification.
  • Supports a maximum transition frequency of 1 MHz suitable for moderate frequency applications.
  • 3-pin configuration facilitates easy integration in power circuits.

Product Description

onsemi NJVMJD32CT4G is a high-performance PNP power transistor designed for use in a variety of electronic and power management applications. This transistor comes in a compact TO-252 package suitable for surface mounting, allowing reliable and efficient thermal management. It supports a maximum DC collector current of -3 A and can withstand a maximum collector emitter voltage of -100 V, making it suitable for medium power load circuits.

The device features a maximum power dissipation of 15 W, enabling robust operation under demanding conditions. The operating temperature range from -65°C to 150°C assures stable performance in harsh environments, including automotive applications. Indeed, this transistor is qualified to the automotive AEC-Q101 standard, ensuring high reliability and quality assurance.

With a minimum DC current gain (hFE) of 25 and a maximum transition frequency of 1 MHz, the NJVMJD32CT4G efficiently amplifies signals at moderate frequencies, suitable for power regulation, amplification, and switching circuits. Its 3-pin configuration and surface mount package type facilitate easy PCB layout and integration in complex systems.

Designed for surface mount applications with a TO-252 package type. Maximum collector current of -3 A and collector emitter voltage of -100 V. Supports high power dissipation up to 15 W for enhanced reliability. Wide operating temperature range from -65°C to 150°C.

Automotive standard qualification AEC-Q101 ensures automotive-grade quality. Minimum DC current gain of 25 for effective signal amplification. Maximum transition frequency of 1 MHz suitable for power switching. Compact 3-pin DPAK/TO-252 package ideal for surface mounting.

This transistor is ideally suited for use in industrial electronics, automotive electronics, power supplies, and various control systems requiring robust and reliable transistor components. Its automotive-grade reliability and compact size make it a trusted choice in demanding environments.

Browse the Power Transistors section on EnvMart for a broad array of semiconductors suitable for your design requirements.

onsemi PNP Power Transistor -3 A, -100 V, 3-Pin TO-252 Surface Mount NJVMJD32CT4G
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