onsemi PNP Power Transistor 16 A 250 V TO-264 Package 3-Pin MJL21195G

The onsemi MJL21195G is a high-power PNP bipolar transistor designed for demanding power applications. It provides a maximum DC collector current of 16 amperes and a maximum collector emitter voltage of 250 volts, making it suitable for use in industrial, automotive, and power control circuits. The 3-pin TO-264 package supports through-hole mounting, facilitating ease of installation in various electronic devices.

Its power dissipation rating of 200 watts allows for efficient heat handling and sustained performance under high load conditions. The transistor operates reliably within a temperature range from -65°C minimum to 150°C maximum, ensuring stable operation in harsh environments.

With a maximum transition frequency of 1 MHz and minimum DC current gain of 25, the MJL21195G transistor delivers excellent switching capabilities and amplification performance. The device's maximum collector base voltage of 400 V dc and emitter base voltage of 5 V further underscore its robustness.

The physical size measures 20.3 mm in length, 5.3 mm in width, and 26.4 mm in height, optimized for space-efficient circuit design. This component is ideal for use in various industrial electronic systems that require reliable power transistor operation.

Provides maximum power dissipation of 200 watts for robust performance. Features TO-264 package with 3 pins suitable for through-hole mounting. Operates within temperature range from -65°C to 150°C ensuring durability. Maximum transition frequency of 1 MHz for efficient switching.

Single transistor configuration with 400V maximum collector base voltage. Minimum DC current gain (hFE) of 25 ensures reliable amplification. Compact dimensions: length 20.3 mm, width 5.3 mm, height 26.4 mm.

This onsemi MJL21195G transistor finds applications in industrial electronics, power supplies, automotive electronics, and various other sectors requiring efficient power switching and amplification solutions. It is a dependable choice for engineers designing circuits requiring high current and voltage transistor components.

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