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onsemi NPN Power Transistor 8A 150V 3-Pin TO-220 Through Hole MJF15030G

Category Power Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 29.85mm
Length 10.63mm
Model MJF15030G
Width 4.9mm
Mount Type Through Hole
Maximum Operating Temperature 150°C
Package Type TO-220
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 150V
Minimum DC Current Gain hFE 20
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 150V
Maximum Power Dissipation Pd 2W
Maximum DC Collector Current Idc 8A
Transistor Configuration Single
Maximum Transition Frequency ft 30MHz
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Key Features

  • Capable of handling maximum collector current of 8 amperes.
  • Maximum collector-emitter voltage rating is 150 volts for high voltage applications.
  • Features a TO-220 package with 3 pins suitable for through-hole mounting.
  • Minimum DC current gain (hFE) of 20 ensures reliable amplification.
  • Can operate over temperature range from -65°C to 150°C.
  • Maximum power dissipation of 2 watts supports moderate power handling requirements.
  • Maximum transition frequency of 30 MHz supports switching at moderate frequencies.
  • Designed as a single NPN transistor configuration for versatile power electronics uses.

Product Description

onsemi MJF15030G is a robust NPN power transistor designed for electronic and industrial applications requiring reliable switching and amplification. It is housed in a 3-Pin TO-220 package for through-hole mounting, allowing for easy integration onto printed circuit boards. Operable over a broad temperature range of -65°C to 150°C, this transistor delivers consistent performance in demanding environments.

The device supports a maximum DC collector current of 8 amperes and a collector-emitter voltage up to 150 volts, making it suitable for a wide range of high voltage power control circuits. Its minimum DC current gain of 20 provides efficient transistor switching and amplification capability. The power dissipation limit of 2 watts is ideal for moderate power applications without excessive heat generation.

With a maximum transition frequency of 30 MHz, the MJF15030G supports switching applications in electronic devices where moderate frequency operation is required. Its compact dimensions make it easy to mount and incorporate into various industrial and commercial electronic equipment.

This transistor is particularly useful in industrial automation, power supplies, motor control, and electronic switching applications. Its reliable construction and standard package type make it a preferred choice for designers seeking durable bipolar junction transistors (BJT) in their power circuits.

Key features include:. 8A maximum collector current. 150V maximum collector-emitter voltage. TO-220 package with 3 pins. Through-hole mount type. Single NPN transistor configuration. Operating temperature range -65°C to 150°C.

Maximum power dissipation of 2W. Maximum transition frequency 30 MHz. Compact size: 29.85mm height, 10.63mm length, 4.9mm width. Set contains 1 Pc onsemi MJF15030G transistor. Explore more Power Transistors within the Electronics & Electrical category at EnvMart for all your industrial and electronic component needs.

onsemi NPN Power Transistor 8A 150V 3-Pin TO-220 Through Hole MJF15030G
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Frequently Asked Questions

The maximum collector current for the MJF15030G is 8 amperes.

This model has a maximum collector-emitter voltage rating of 150 volts.

It can operate over a temperature range from -65°C to 150°C.

The maximum power dissipation for the MJF15030G is 2 watts.

The maximum transition frequency of the MJF15030G is 30 MHz.

It is housed in a TO-220 package with 3 pins suitable for through-hole mounting.

The minimum DC current gain (hFE) is 20, ensuring reliable amplification.

This model has a height of 29.85 mm, a length of 10.63 mm, and a width of 4.9 mm.

It is designed as a single NPN transistor configuration.

This transistor is particularly useful in industrial automation, power supplies, motor control, and electronic switching applications.

The maximum emitter-base voltage (VEBO) is 5 volts.

The country of origin for this transistor is India.

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