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STMicroelectronics NPN Power Transistor, 6 A Collector Current, 100 V Collector-Emitter Voltage, TO-220 Package TIP41C
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 28.9mm |
| Length | 10.4mm |
| Model | TIP41C |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | TIP41C |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | 0°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 100V |
| Minimum DC Current Gain hFE | 10 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Base Voltage VCBO | 100V |
| Maximum Power Dissipation Pd | 65W |
| Maximum DC Collector Current Idc | 6A |
| Transistor Configuration | Single |
Key Features
- Maximum DC collector current of 6 A supports medium power applications.
- Collector-emitter voltage rating of 100 V allows operation in high voltage circuits.
- Package type TO-220 ensures efficient heat dissipation with metal tab for mounting.
- Transistor polarity is NPN suitable for switching and amplification.
- Maximum power dissipation of 65 W allows handling significant thermal load.
- Minimum DC current gain (hFE) of 10 ensures reliable gain in amplification.
- Operating temperature range from 0°C to 150°C fits industrial and automotive conditions.
- Three-pin configuration for simple interfacing in electronic circuits.
Product Description
STMicroelectronics TIP41C power transistor is an NPN bipolar transistor designed for medium power switching and amplification tasks. Its maximum collector current of 6 A and collector-emitter voltage of 100 V make it suitable for various electronic, industrial, and automotive control systems.
The TO-220 package offers enhanced heat dissipation capabilities by allowing mounting to heat sinks via its metal tab. This transistor features a robust maximum power dissipation of 65 W which supports demanding load conditions without damage.
Designed for through-hole mounting, the TIP41C transistor is easy to integrate into standard printed circuit boards. It has a minimum DC current gain of 10 and a maximum emitter-base voltage of 5 V, offering stable and reliable operation in amplifier or switch roles.
Its operating range of 0°C to 150°C ensures functionality in diverse environments including industrial machinery control, power supply regulation, HVAC systems, and automotive electronics.
Maximum DC collector current: 6 A. Maximum collector-emitter voltage: 100 V. Package type: TO-220 with mounting hole. Transistor polarity: NPN. Maximum power dissipation: 65 W. Minimum DC current gain (hFE): 10. Operating temperature from 0°C to 150°C.
Pin count: 3 for easy circuit connections. Single transistor configuration for discrete semiconductor designs.
This robust transistor by STMicroelectronics is suited for a wide range of applications including industrial automation, power supply switching, electronic amplifiers, and automotive controls. Its reliable electrical characteristics and packaging provide versatility and durability.
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Frequently Asked Questions
The maximum collector current of the TIP41C transistor is 6 A.
The collector-emitter voltage rating for the TIP41C is 100 V.
The TIP41C transistor comes in a TO-220 package type, which allows for efficient heat dissipation and includes a metal tab for mounting.
The operating temperature range for the TIP41C is from 0°C to 150°C.
The maximum power dissipation of the TIP41C is 65 W.
The minimum DC current gain (hFE) of the TIP41C is 10.
The TIP41C has a pin count of 3, allowing for simple interfacing in electronic circuits.
The TIP41C is an NPN bipolar transistor suitable for switching and amplification tasks.
The TIP41C is designed for through-hole mounting, making it easy to integrate into standard printed circuit boards.
The maximum emitter-base voltage (VEBO) for the TIP41C is 5 V.
The TIP41C is suitable for various applications including industrial automation, power supply switching, electronic amplifiers, and automotive controls.
The TIP41C is manufactured in India.
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