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onsemi NPN Power Transistor, 10 A, 60 V, TO-252 3-Pin Surface Mount, MJD3055T4G

Category Power Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 16mm
Length 6.73mm
Model MJD3055T4G
Width 2.38mm
Mount Type Surface
Series MJD3055
Maximum Operating Temperature 150°C
Package Type TO-252
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 60V
Minimum DC Current Gain hFE 5
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 70V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 20W
Maximum DC Collector Current Idc 10A
Transistor Configuration Single
Maximum Transition Frequency ft 500kHz

Key Features

  • The transistor features a TO-252 package with 3 pins for surface mounting.
  • Maximum collector current is rated at 10 A, suitable for power applications.
  • Collector-emitter voltage is 60 V, compatible with various power circuits.
  • Power dissipation capability of 20 W ensures reliable heat management.
  • Operating temperature range spans from -55°C to 150°C for harsh environments.
  • Minimum DC current gain of 5 ensures sufficient amplification.
  • Automotive grade qualified to AEC-Q101 standard for robust performance.
  • Maximum transition frequency is 500 kHz for switching efficiency.

Product Description

onsemi MJD3055T4G is an NPN power transistor designed for industrial and automotive applications. It supports a maximum DC collector current of 10 A and a collector-emitter voltage up to 60 V, packaged in a TO-252 3-pin surface mount device.

This transistor is engineered for high power dissipation, with a rating of 20 W, allowing efficient heat management during operation. It operates reliably in a wide temperature range from -55°C to 150°C, making it suitable for demanding environments including automotive and industrial circuits.

The transistor features a minimum DC current gain (hFE) of 5, ensuring adequate amplification performance in power switching applications. The maximum transition frequency of 500 kHz provides efficient switching characteristics.

The compact physical dimensions (height 16 mm, length 6.73 mm, width 2.38 mm) allow for space-saving PCB designs. It complies with the automotive standard AEC-Q101, confirming its suitability for automotive electronics.

Typical industrial uses include power regulation, motor control, and switching in electronic equipment and automotive systems. The transistor comes in a TO-252 package with 3 surface mount pins for easy integration. Maximum DC collector current of 10 A enables high-power applications.

Collector-emitter voltage up to 60 V supports robust circuit design. Power dissipation of 20 W ensures thermal reliability. Wide operating temperature range for automotive and industrial use. AEC-Q101 certification guarantees automotive quality.

Compact dimensions facilitate design flexibility. Explore more Power Transistors and electronic components at EnvMart for your industrial and automotive projects.

onsemi NPN Power Transistor, 10 A, 60 V, TO-252 3-Pin Surface Mount, MJD3055T4G
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Frequently Asked Questions

The maximum collector current for this model is rated at 10 A, making it suitable for high-power applications.

The collector-emitter voltage for the MJD3055T4G is up to 60 V, which supports robust circuit designs.

This transistor has a power dissipation capability of 20 W, ensuring reliable heat management during operation.

It operates within a temperature range of -55°C to 150°C, suitable for harsh environments.

The TO-252 package of this model features 3 pins for surface mounting.

The minimum DC current gain (hFE) for the MJD3055T4G is 5, ensuring sufficient amplification performance.

The maximum transition frequency is 500 kHz, providing efficient switching characteristics.

Yes, it is automotive grade qualified to the AEC-Q101 standard, confirming its suitability for automotive electronics.

This model has dimensions of 16 mm in height, 6.73 mm in length, and 2.38 mm in width.

It is an NPN power transistor designed for industrial and automotive applications.

The maximum emitter-base voltage (VEBO) is rated at 5 V for the MJD3055T4G.

Typical applications include power regulation, motor control, and switching in electronic equipment and automotive systems.

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