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ROHM 2 A NPN Power Transistor, 50 V, 4-Pin SOT-89 Package, Common Emitter Configuration 2SCR553P5T100

Category Power Transistors Brand ROHM Condition New

Specifications

Country of Origin India
Brand ROHM
Height 1.6mm
Length 4.7mm
Model 2SCR553P5T100
Width 2.7mm
Mount Type Surface
Series 2SCR553P5
Maximum Operating Temperature 150°C
Package Type SOT-89
Pin Count 4
Maximum Collector Emitter Voltage Vceo 50V
Minimum DC Current Gain hFE 180
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 50V
Maximum Power Dissipation Pd 500mW
Maximum DC Collector Current Idc 2A
Transistor Configuration Common Emitter
Maximum Transition Frequency ft 100MHz

Key Features

  • This bipolar transistor operates up to a maximum power dissipation of 500 mW.
  • It features a common emitter transistor configuration suitable for switching and amplification.
  • The device offers a minimum DC current gain (hFE) of 180, ensuring efficient current amplification.
  • Maximum operating temperature is rated at 150°C, supporting reliable performance in harsh environments.
  • The transistor achieves a maximum transition frequency (ft) of 100 MHz, making it suitable for high-frequency applications.
  • Physical dimensions are compact with a length of 4.7 mm, width of 2.7 mm, and height of 1.6 mm.
  • Designed with surface mount technology (SMT) for ease of PCB integration.
  • Suitable for industrial electronic circuits requiring NPN power transistors with robust specifications.

Product Description

ROHM 2SCR553P5T100 is a high-quality NPN power transistor designed to handle a maximum DC collector current of 2 A and a collector-emitter voltage rating of 50 V. Packaged in a 4-Pin SOT-89 surface mount casing, this transistor suits compact electronic designs requiring efficient switching and amplification.

Featuring a common emitter configuration, it delivers dependable performance with a minimum DC current gain (hFE) of 180. With a maximum power dissipation of 500 mW, this transistor can operate reliably under considerable electrical stress.

The device supports operations up to 150°C, making it ideal for use in various industrial and commercial electronics applications, including power regulation, signal amplification, and switching circuits. It attains a transition frequency of 100 MHz, supporting moderate to high frequency switching operations.

The transistor’s physical dimensions of 4.7 mm length, 2.7 mm width, and 1.6 mm height facilitate a compact layout on printed circuit boards, especially those utilizing surface mount technology. The 4-pin configuration allows ease of connectivity and integration into circuit designs.

This transistor is built according to ROHM’s quality standards and is suitable for professional electronic manufacturing and repair. Applications include industrial automation, power supply modules, control circuits, and other electronics requiring durable bipolar transistors.

Compliant with general electronic component standards, although no specific certification or automotive approvals apply.

ROHM Power Transistors, such as the 2SCR553P5T100, offer reliable solutions for energy-efficient and compact designs in commercial and laboratory settings. Explore EnvMart’s selection of semiconductor devices for high-quality components suited to diverse applications.

ROHM 2 A NPN Power Transistor, 50 V, 4-Pin SOT-89 Package, Common Emitter Configuration 2SCR553P5T100
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Frequently Asked Questions

The maximum power dissipation of the ROHM 2SCR553P5T100 is 500 mW.

This model has a collector-emitter voltage rating of 50 V.

It can handle a maximum DC collector current of 2 A.

The maximum transition frequency of this transistor is 100 MHz, making it suitable for high-frequency applications.

The physical dimensions are 4.7 mm in length, 2.7 mm in width, and 1.6 mm in height.

It features a common emitter configuration, which is suitable for both switching and amplification applications.

The minimum DC current gain (hFE) is 180, ensuring efficient current amplification.

The maximum operating temperature is rated at 150°C, allowing reliable performance in harsh environments.

This model is designed for surface mount technology (SMT), facilitating easy PCB integration.

The transistor is packaged in a 4-Pin SOT-89 casing, suitable for compact electronic designs.

It is suitable for various industrial and commercial electronics applications, including power regulation, signal amplification, and switching circuits.

The maximum emitter-base voltage (VEBO) is 6 V.

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