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ROHM Bipolar PNP Transistor 800A, -32V Collector Emitter Voltage, 3-Pin SOT-346 Package 2SB1197KT146Q

Category Bipolar Transistors Brand ROHM Condition New

Specifications

Country of Origin India
Brand ROHM
Height 1.3mm
Length 3mm
Model 2SB1197KT146Q
Width 1.8mm
Mount Type Surface
Series 2SB1197K
Maximum Operating Temperature 150°C
Package Type SOT-346
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -32V
Minimum DC Current Gain hFE 120
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO -40V
Maximum Power Dissipation Pd 200mW
Maximum DC Collector Current Idc 800A

Key Features

  • Surface mount SOT-346 package with 3 pins for efficient PCB integration.
  • Maximum power dissipation capability of 200 mW ensuring reliable performance.
  • Wide operating temperature range from -55°C to 150°C.
  • Minimum DC current gain (hFE) of 120 for effective amplification.
  • Robust voltage ratings including maximum collector base voltage of -40V and emitter base voltage of -5V.
  • Designed primarily for low frequency power amplifier applications.

Product Description

ROHM 2SB1197KT146Q is a bipolar PNP transistor specifically engineered for low frequency power amplification applications. It supports a maximum DC collector current of 800A and a collector emitter voltage rating of -32V, which ensures it can handle demanding current and voltage loads in electrical circuits.

This device uses a surface mount technology package (SOT-346), featuring 3 pins, allowing for efficient mounting on printed circuit boards and compact design requirements. Its maximum power dissipation of 200 mW provides durability and stable operation within its power limits.

The transistor operates reliably across a broad temperature range from -55°C minimum to 150°C maximum, making it suitable for industrial and commercial electronic environments. It delivers a minimum DC current gain (hFE) of 120, improving the amplification characteristics necessary for high-quality signal processing.

With robust voltage constraints including a collector base voltage of -40V and emitter base voltage of -5V, it ensures solid protection margins in circuit designs. The physical dimensions are optimized for modern compact devices, measuring 3 mm in length, 1.8 mm in width, and 1.3 mm in height.

ROHM 2SB1197KT146Q is widely used in bipolar transistor applications, focusing on power amplification in low frequency ranges. Its compatibility with complementary models enhances circuit design flexibility.

Surface mount SOT-346 package with 3 pins for efficient PCB integration. Maximum power dissipation of 200 mW ensures stable operation. Wide operating temperature range from -55°C to 150°C. Minimum DC current gain (hFE) of 120.

Robust voltage ratings: maximum collector base voltage -40V, emitter base voltage -5V. Compact size: 3 mm length, 1.8 mm width, 1.3 mm height.

This transistor is essential for industrial, electronics manufacturing, and construction applications where low frequency power amplification is required. It provides a reliable component for engineers designing high-performance electronic circuits.

Explore more products in the Bipolar Transistors category on EnvMart for additional components and compatible solutions.

ROHM Bipolar PNP Transistor 800A, -32V Collector Emitter Voltage, 3-Pin SOT-346 Package 2SB1197KT146Q
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