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STMicroelectronics PNP Transistor Through Hole SOT-32 Package 3-Pin, 3 A 80 V BD140

Category Bipolar Transistors Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 2.9mm
Length 27.05mm
Model BD140
Width 7.8mm
Mount Type Through Hole
Maximum Operating Temperature 150°C
Package Type SOT-32
Pin Count 3
Maximum Collector Emitter Voltage Vceo -80V
Minimum DC Current Gain hFE 25
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 80V
Maximum Power Dissipation Pd 1.25W
Maximum DC Collector Current Idc -3A
Transistor Configuration Single

Key Features

  • The transistor supports a maximum power dissipation of 1.25 watts.
  • It has a minimum DC current gain (hFE) of 25.
  • The device operates up to a maximum temperature of 150°C.
  • Designed for general purpose applications with single transistor configuration.
  • Pin count is 3, facilitating through-hole mounting.
  • Maximum collector base voltage is 80 V and emitter base voltage is 5 V.

Product Description

The STMicroelectronics BD140 is a general-purpose PNP bipolar transistor designed for robust performance in electronic circuits. Featuring a through-hole mount and SOT-32 package type with 3 pins, this transistor is ideal for applications requiring reliable switching and amplification.

It supports a maximum DC collector current of -3 A and a collector-emitter voltage rating of -80 V, making it suitable for moderate power electronics use. The device dissipates up to 1.25 watts of power, ensuring stable operation within its power limits.

The minimum DC current gain hFE of 25 guarantees adequate amplification characteristics for diverse signal handling and switching tasks in consumer, industrial, and automotive electronics. The transistor can operate safely up to a maximum temperature of 150°C, enabling resilience in demanding thermal environments.

With precise dimensions measuring 27.05 mm in length, 7.8 mm in width, and 2.9 mm in height, the transistor fits standard through-hole PCB layouts. Its pin count of 3 corresponds to typical transistor package designs, facilitating integration into various circuit boards with ease.

This product is commonly used in industrial, laboratory, and commercial electronic devices, offering durability and consistent electrical performance in switching and amplification roles. The transistor’s PNP polarity and single configuration provide flexible deployment in a wide array of bipolar transistor circuits.

The transistor supports a maximum power dissipation of 1.25 watts. It has a minimum DC current gain (hFE) of 25. The device operates up to a maximum temperature of 150°C. The package dimensions are: 27.05 mm length, 7.8 mm width, and 2.9 mm height.

Designed for general purpose applications with single transistor configuration. Pin count is 3, facilitating through-hole mounting. Maximum collector base voltage is 80 V and emitter base voltage is 5 V. Explore more STMicroelectronics Bipolar Transistors and power semiconductors in the EnvMart catalog to find components optimized for your design needs.

STMicroelectronics PNP Transistor Through Hole SOT-32 Package 3-Pin, 3 A 80 V BD140
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Frequently Asked Questions

The maximum power dissipation of the BD140 transistor is 1.25 watts.

This model has a maximum collector-emitter voltage rating of -80 V.

The minimum DC current gain (hFE) for the BD140 is 25.

The BD140 can operate safely up to a maximum temperature of 150°C.

The dimensions of this transistor are 27.05 mm in length, 7.8 mm in width, and 2.9 mm in height.

The BD140 has 3 pins and is designed for through-hole mounting.

The maximum DC collector current for the BD140 is -3 A.

The maximum emitter-base voltage (VEBO) for the BD140 is 5 V.

The BD140 is a PNP bipolar transistor designed for general-purpose applications.

This transistor is commonly used in industrial, laboratory, and commercial electronic devices for switching and amplification roles.

The BD140 uses a SOT-32 package type.

Yes, the BD140 is designed for general-purpose applications with a single transistor configuration.

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