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Nexperia Resistor-Equipped NPN Transistor 100 mA, 50 V, 3-Pin TO-236 PDTC114ET,235

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Height 1.1mm
Length 3mm
Model PDTC114ET,235
Width 1.4mm
Mount Type Surface
Series PDTC114E
Maximum Operating Temperature 150°C
Package Type TO-236
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 50V
Minimum DC Current Gain hFE 30
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 10V
Maximum Collector Base Voltage VCBO 50V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 250mW
Maximum DC Collector Current Idc 100mA
Transistor Configuration Single
onsemi MMUN2211LT1G Digital Transistor, 50 V NPN Surface SOT-23, 3-PinBrand onsemi

Key Features

  • This transistor provides a 100 mA maximum DC collector current capability.
  • It features a maximum collector emitter voltage of 50 V to withstand moderate voltages.
  • Equipped with built-in bias resistors to simplify circuit design and reduce component count.
  • The compact TO-236 surface mount package facilitates automated placement and space savings.
  • Designed for operation in a temperature range from -65°C to 150°C, suitable for harsh environments.
  • Ideal for digital applications in automotive and industrial sectors as a cost-effective alternative in switching loads.
  • Compatible with control of integrated circuit inputs to improve design efficiency.

Product Description

Nexperia PDTC114ET,235 Resistor-Equipped NPN Transistor is a surface-mounted device in a compact TO-236 plastic package. It supports a collector current of up to 100 mA and a maximum collector emitter voltage of 50 V, making it suitable for various automotive and industrial digital control applications.

The transistor integrates built-in bias resistors, which simplify circuit designs by reducing external components needed for biasing and consequently lowering the overall component count and assembly costs. Its 3-pin surface mount form factor enables automated pick and place, enhancing production efficiency and reducing footprint.

This NPN bipolar transistor features a minimum DC current gain of 30, maximum power dissipation of 250 mW, and a maximum emitter base voltage of 10 V. It operates safely within temperatures ranging from -65°C to 150°C, making it robust enough for demanding environments.

Common use cases include digital load switching, control of integrated circuit inputs, and serving as a cost-saving alternative to similar BC847/857 transistor series in automotive and industrial electronics segments.

This transistor supports a 100 mA collector current, suitable for low power signal switching. The device is housed in a space-efficient 3-pin TO-236 package optimized for surface mount technology. Built-in bias resistors help reduce the number of external components for simplified circuit layouts.

Rated to operate at temperatures from -65°C to 150°C ensuring reliability in automotive and industrial contexts. The transistor offers a maximum power dissipation of 250 mW for stable performance in switching applications.

Designed according to automotive standard AEC-Q101, ensuring high quality and reliability required by the automotive industry. Its compact dimensions of 3 mm length, 1.4 mm width, and 1.1 mm height facilitate integration into dense PCB layouts.

Explore EnvMart to find a broad range of Bipolar Transistors and semiconductor components from leading manufacturers like Nexperia, suitable for advanced electronic designs and industrial applications.

Nexperia Resistor-Equipped NPN Transistor 100 mA, 50 V, 3-Pin TO-236 PDTC114ET,235
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Frequently Asked Questions

The maximum DC collector current for this model is 100 mA.

This transistor has a maximum collector-emitter voltage rating of 50 V.

It operates safely within a temperature range from -65°C to 150°C.

It is housed in a compact TO-236 surface mount package.

Yes, it features built-in bias resistors to simplify circuit design and reduce component count.

The minimum DC current gain (hFE) for this model is 30.

The dimensions are 3 mm in length, 1.4 mm in width, and 1.1 mm in height.

The maximum power dissipation is rated at 250 mW.

It is designed according to the automotive standard AEC-Q101.

The maximum emitter-base voltage (VEBO) is 10 V.

It is commonly used for digital load switching and control of integrated circuit inputs in automotive and industrial sectors.

This model is a single NPN transistor configuration.

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