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Nexperia Bipolar Transistor 100 mA NPN + PNP 45 V 6-Pin SOT-363 BC847BPN,135

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Height 1.1mm
Length 2.2mm
Model BC847BPN,135
Width 1.35mm
Mount Type Surface
Series BC847BPN
Maximum Operating Temperature 150°C
Package Type SOT-363
Minimum Operating Temperature -65°C
Pin Count 6
Maximum Collector Emitter Voltage Vceo 45V
Minimum DC Current Gain hFE 200
Transistor Polarity NPN + PNP
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 50V
Maximum Power Dissipation Pd 400mW
Maximum DC Collector Current Idc 100mA
Transistor Configuration Current Mirror
onsemi BC847BPDW1T1G Transistor, 100 mA NPN + PNP, 45 V, 6-Pin SOT-363Brand onsemi

Key Features

  • Supports a maximum DC collector current of 100 mA for general-purpose switching applications.
  • Maximum collector-emitter voltage rating of 45 V ensures stable operation under moderate voltage loads.
  • Packaged in a small SOT-363 surface mount device with 6 pins, ideal for space-saving PCB designs.
  • Current mirror transistor configuration provides closely matched NPN and PNP pairs to reduce board component count.
  • Maximum power dissipation of 400 mW allows for efficient heat management.
  • Wide operating temperature range from -65°C to 150°C suitable for diverse industrial and automotive applications.
  • Minimum DC current gain (hFE) of 200 ensures adequate amplification capacity.
  • Low collector capacitance and low collector-emitter saturation voltage improve switching performance.

Product Description

The Nexperia BC847BPN,135 is a dual bipolar transistor designed for general-purpose switching and amplification in electronic and electrical circuits. This device integrates both NPN and PNP transistors in a single, highly compact SOT-363 surface mount package, featuring six pins. The combined transistor configuration functions as a current mirror, which provides closely matched transistor pairs that reduce component count and simplify circuit design.

With a maximum DC collector current of 100 mA and a collector-emitter voltage rating of 45 V, the BC847BPN,135 transistor meets the demands of moderate power applications. It offers a maximum power dissipation of 400 mW, enabling reliable performance with effective heat management in compact assemblies.

Operating reliably within a wide temperature range from -65°C to 150°C, this transistor suits industrial, automotive, and general electronic environments. It has a minimum DC current gain of 200, ensuring strong amplification. The transistor’s low collector capacitance and low collector-emitter saturation voltage further enhance switching speed and efficiency.

Compact dimensions (2.2 mm length, 1.35 mm width, and 1.1 mm height) enable high-density PCB layouts and minimize board space usage, which is critical in modern electronic devices.

Key applications include general switching, amplification, and current mirror configurations in electronic circuits across industrial controls, consumer electronics, automotive systems, and communication equipment.

Supports a maximum collector current of 100 mA. Rated for 45 V maximum collector-emitter voltage. Small 6-pin SOT-363 surface mount package for compact PCB footprints. Current mirror transistor configuration provides matched NPN and PNP pairs.

Power dissipation up to 400 mW enables efficient operation. Operates over a broad temperature range from -65°C to 150°C. Minimum DC current gain (hFE) of 200 for enhanced amplification. Low collector capacitance improves switching performance.

Compact physical dimensions suited for dense PCBs. Explore more transistor options and electronic components on EnvMart for your industrial, commercial, and laboratory electronic designs.

Explore more products in our Bipolar Transistors category.

Nexperia Bipolar Transistor 100 mA NPN + PNP 45 V 6-Pin SOT-363 BC847BPN,135
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Frequently Asked Questions

The maximum DC collector current for the BC847BPN,135 is 100 mA, suitable for general-purpose switching applications.

This model has a maximum collector-emitter voltage rating of 45 V, ensuring stable operation under moderate voltage loads.

The SOT-363 package dimensions are 2.2 mm in length, 1.35 mm in width, and 1.1 mm in height, making it suitable for space-saving PCB designs.

The minimum DC current gain (hFE) for the BC847BPN,135 is 200, which ensures adequate amplification capacity.

It allows for a maximum power dissipation of 400 mW, enabling efficient heat management.

The operating temperature range for this model is from -65°C to 150°C, making it suitable for diverse industrial and automotive applications.

The BC847BPN,135 features a current mirror transistor configuration, providing closely matched NPN and PNP pairs.

This transistor has a pin count of 6, packaged in a compact SOT-363 surface mount device.

It is suitable for general switching, amplification, and current mirror configurations in electronic circuits across various applications.

The maximum emitter-base voltage (VEBO) for this model is 5 V, which is important for its operation.

The maximum collector-base voltage (VCBO) rating for this transistor is 50 V, ensuring reliable performance in circuits.

The BC847BPN,135 is designed for surface mounting, which is ideal for high-density PCB layouts.

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