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onsemi Digital Transistor PNP Through Hole TO-92 3-Pin, -30 V Maximum Collector Emitter Voltage BC516-D27Z
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 21.77mm |
| Length | 5.2mm |
| Model | BC516-D27Z |
| Width | 4.19mm |
| Mount Type | Through Hole |
| Series | BC516 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-92 |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | -30V |
| Minimum DC Current Gain hFE | 30000 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | -10V |
| Maximum Collector Base Voltage VCBO | -40V |
| Maximum Power Dissipation Pd | 625mW |
| Transistor Configuration | Single |
Key Features
- The transistor offers a very high DC current gain of 30000.
- It supports a maximum power dissipation of 625 mW.
- The transistor operates at a maximum temperature of 150 degrees Celsius.
- Designed for applications requiring high current gain through a single transistor configuration.
- The device dimensions include a height of 21.77 mm, width of 4.19 mm, and a length of 5.2 mm.
- Pin count is 3, suitable for standard through-hole mounting.
- It does not comply with automotive standards.
- Ideal for general semiconductor and bipolar transistor applications in electronic circuits.
Product Description
onsemi BC516-D27Z digital transistor is a PNP Darlington transistor designed for applications requiring extremely high current gain at currents up to 1 A. Packaged in a compact TO-92 case, it features a through-hole mount type with three pins, making it suitable for traditional circuit board layouts.
This transistor supports a maximum collector emitter voltage (Vceo) of -30 V and maximum collector base voltage (VCBO) of -40 V, ensuring robust operation in bipolar transistor applications. It also offers a minimum DC current gain (hFE) of 30000, making it highly efficient for signal amplification needs.
With a maximum power dissipation of 625 mW, this component manages thermal stress effectively and can operate continuously at temperatures up to 150°C. The emitter base voltage (VEBO) maximum rating is -10 V, providing further operational limits for design considerations.
The physical dimensions of height 21.77 mm, width 4.19 mm, and length 5.2 mm ensure ease of integration in compact designs. The 3-pin configuration is standard for through-hole transistors, facilitating reliable soldering and circuit connections.
Though this transistor lacks automotive certifications, it fits well in industrial, laboratory, and general electronic applications requiring high gain transistors for switching or amplification.
The device is a PNP Darlington transistor designed for high current gain applications. Its TO-92 package type allows through-hole mounting on printed circuit boards. Supports up to -30 V collector emitter voltage and dissipates 625 mW power.
Operates reliably up to 150°C maximum temperature. Features a 3-pin configuration for standard electric connections. Suitable for industrial, semiconductor, and general electronic projects. Dimensions of 21.77 mm height, 4.19 mm width, and 5.2 mm length aid in design integration.
Explore more on bipolar and digital transistors at EnvMart for precision and reliability in your electronic circuitry demands.
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Frequently Asked Questions
The maximum collector emitter voltage (Vceo) for this transistor is -30 V.
This model supports a maximum power dissipation of 625 mW.
The transistor has a height of 21.77 mm, a width of 4.19 mm, and a length of 5.2 mm.
The minimum DC current gain (hFE) for this transistor is 30000.
This transistor operates reliably at a maximum temperature of 150°C.
It features a through-hole mounting type, suitable for standard circuit board layouts.
The BC516-D27Z has a pin count of 3.
The maximum collector base voltage (VCBO) is -40 V.
The maximum emitter base voltage (VEBO) rating is -10 V.
This transistor is designed for general semiconductor and bipolar transistor applications in electronic circuits, particularly where high current gain is required.
The BC516-D27Z is a PNP Darlington transistor configured for single transistor applications.
The country of origin for this transistor is India.
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