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onsemi PNP Transistor 100 mA, 50 V, 3-Pin SOT-323 Surface Mount MUN5111T1G

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onsemi PNP Transistor 100 mA, 50 V, 3-Pin SOT-323 Surface Mount MUN5111T1G

Name: onsemi PNP Transistor 100 mA, 50 V, 3-Pin SOT-323 Surface Mount MUN5111T1G
Brand: onsemi
SKU: 416798
Price: 0.03 USD
Availability: InStock

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Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin	China
Brand	onsemi
Height	1mm
Length	2.2mm
Model	MUN5111T1G
Width	1.35mm
Mount Type	Surface
Series	MUN5111T1G
Maximum Operating Temperature	150°C
Package Type	SOT-323
Standards/Approvals	RoHS
Pin Count	3
Maximum Collector Emitter Voltage Vceo	-50V
Minimum DC Current Gain hFE	35
Transistor Polarity	PNP
Maximum Collector Base Voltage VCBO	50V
Automotive Standard	AEC-Q101
Maximum Power Dissipation Pd	310mW
Maximum DC Collector Current Idc	-100mA
Transistor Configuration	Single
onsemi MUN5111T1G Transistor, -100 mA PNP, -50 V, 3-Pin SOT-323Brand	onsemi

Key Features

Features a single transistor with integrated bias resistors for ease of circuit design.
Offers a maximum power dissipation of 310 mW suitable for compact electronic circuits.
Designed for surface mount technology with a compact SOT-323 package.
Operating temperature range up to 150°C ensures reliability in demanding environments.
Maintains a minimum DC current gain (hFE) of 35 for efficient amplification.
Pin count of 3 supports typical transistor configurations in circuits.
Complies with RoHS standards and meets AEC-Q101 automotive standards.
Package dimensions approx. 2.2mm length, 1.35mm width, and 1.0mm height for space-saving layouts.

Product Description

onsemi MUN5111T1G is a PNP bipolar transistor designed for surface mount applications, delivering a maximum DC collector current of -100 mA and a collector-emitter voltage rating of -50 V. Housed in a small SOT-323 package, this transistor integrates two bias resistors monolithically, simplifying circuit design by eliminating the need for external resistor networks.

This device features a single transistor configuration with a minimum DC current gain of 35 and is capable of dissipating up to 310 mW of power. Its compact package size of 2.2 mm length, 1.35 mm width, and 1 mm height makes it ideal for high-density PCB layouts.

The MUN5111T1G operates reliably in a wide temperature range up to 150°C, meeting the stringent automotive standard AEC-Q101 and conforming to RoHS compliance for environmental safety. Its integrated nature reduces component count and board space, resulting in lower system cost and enhanced reliability.

Single PNP transistor with integrated bias resistor network. Maximum DC collector current of -100 mA and voltage of -50 V. Surface mount SOT-323 package for compact applications. 310 mW maximum power dissipation suitable for low power circuits.

Minimum current gain of 35 ensures effective signal amplification. Operates at temperatures up to 150°C for robust operation. Compliant with RoHS and automotive AEC-Q101 standards. Small package dimensions facilitate space-saving PCB designs.

Commonly used in electronic, automotive, and industrial applications requiring a reliable, compact switching or amplification device. Suitable for instrumentation, control systems, and other power sensitive applications.

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