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ROHM Power NPN Transistor, 3 A Collector Current, 120 V Collector-Emitter Voltage, TO-252 3-Pin DPAK Package 2SCR587D3TL1

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ROHM Power NPN Transistor, 3 A Collector Current, 120 V Collector-Emitter Voltage, TO-252 3-Pin DPAK Package 2SCR587D3TL1

Name: ROHM Power NPN Transistor, 3 A Collector Current, 120 V Collector-Emitter Voltage, TO-252 3-Pin DPAK Package 2SCR587D3TL1
Brand: ROHM
SKU: 413824
Price: 0.92 USD
Availability: InStock

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Category Bipolar Transistors Brand ROHM Condition New

Specifications

Country of Origin	India
Brand	ROHM
Height	2.4mm
Length	6.8mm
Model	2SCR587D3TL1
Width	10.4mm
Mount Type	Surface
Series	2SCR587D
Maximum Operating Temperature	150°C
Package Type	TO-252
Minimum Operating Temperature	-55°C
Pin Count	3
Maximum Collector Emitter Voltage Vceo	120V
Minimum DC Current Gain hFE	120
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	6V
Maximum Collector Base Voltage VCBO	120V
Automotive Standard	AEC-Q101
Maximum Power Dissipation Pd	10W
Maximum DC Collector Current Idc	3A
Transistor Configuration	Single
Maximum Transition Frequency ft	250MHz

Key Features

Maximum collector current of 3 amperes supports medium power applications.
Collector-emitter voltage rating of 120 volts ensures robust switching performance.
TO-252 (DPAK) package allows efficient surface mounting on PCBs.
Power dissipation capacity of 10 watts supports heat management in compact designs.
High minimum DC current gain of 120 provides amplification efficiency.
Wide operating temperature range from -55°C to 150°C suitable for automotive and industrial use.
Complementary PNP transistor model is 2SAR587D3 for paired applications.
Low pin count with 3 pins simplifies circuit design and assembly.

Product Description

The ROHM 2SCR587D3TL1 is a power NPN transistor with a maximum DC collector current of 3 amperes and a collector-emitter voltage rating of 120 volts. It comes in a TO-252 (DPAK) surface mount package featuring 3 pins, making it suitable for compact and efficient PCB mounting in power driver circuits.

This transistor is designed primarily for low frequency amplifier applications and supports power dissipation of up to 10 watts, ensuring reliable operation under higher thermal loads. The device exhibits a minimum DC current gain (hFE) of 120 and maximum transition frequency of 250 MHz, favoring efficient signal amplification with good frequency response.

Featuring a wide operating temperature range from -55°C to 150°C, the 2SCR587D3TL1 meets the stringent requirements of automotive applications, being compliant with the AEC-Q101 automotive quality standard. This makes it reliable for use in harsh industrial environments and automotive electronics.

The transistor has a maximum collector-base voltage and emitter-base voltage rated at 120 V and 6 V respectively, enhancing its voltage handling capability. The 3-pin configuration simplifies circuit layout and connection. A complementary PNP transistor (2SAR587D3) is available for design versatility.

This product is suited for industrial, automotive, and power amplification applications, offering robust performance and ease of integration in electronic component assemblies requiring medium power bipolar transistors.

Maximum collector current: 3 A. Collector-emitter voltage: 120 V. Package: TO-252 (DPAK) surface mount. Power dissipation: 10 W. DC current gain (hFE): min 120. Operating temperature range: -55°C to 150°C. Automotive standard: AEC-Q101 compliant.

Pin count: 3. Explore more Bipolar Transistors and power components in the Electronics & Electricals category on EnvMart for excellence in semiconductor solutions.