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onsemi Transistor, NPN Bipolar, 500 mA, 45 V, 3-Pin SOT-23 BC817-40LT3G

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onsemi Transistor, NPN Bipolar, 500 mA, 45 V, 3-Pin SOT-23 BC817-40LT3G

Name: onsemi Transistor, NPN Bipolar, 500 mA, 45 V, 3-Pin SOT-23 BC817-40LT3G
Brand: onsemi
SKU: 421292
Price: 0.04 USD
Availability: InStock

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Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	1.1mm
Length	3.4mm
Model	BC817-40LT3G
Width	2.64mm
Mount Type	Surface
Series	BC817-40L
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-65°C
Pin Count	3
Maximum Collector Emitter Voltage Vceo	45V
Minimum DC Current Gain hFE	40
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	5V
Maximum Collector Base Voltage VCBO	50V
Maximum Power Dissipation Pd	300mW
Maximum DC Collector Current Idc	500mA
Transistor Configuration	Single
Maximum Transition Frequency ft	100MHz

Key Features

The transistor supports a maximum collector-emitter voltage of 45 V.
It operates with a maximum DC collector current of 500 mA.
The device features a maximum power dissipation of 300 mW and a transition frequency of 100 MHz.
The minimum DC current gain (hFE) is 40, ensuring reliable amplification performance.
It is optimized for linear and switching applications in electronic circuits.
The transistor has a compact package dimension with length 3.4 mm, width 2.64 mm, and height 1.1 mm.
Operating temperature range is from -65°C to 150°C, suitable for varied industrial environments.
The device provides protection features including ESD, polarity reversal, data line, and inductive load protection.

Product Description

onsemi BC817-40LT3G is a NPN bipolar transistor designed for use in linear and switching applications. It is housed in a compact 3-Pin SOT-23 surface mount package optimized for low power electronic circuits.

This transistor supports a maximum DC collector current of 500 mA and a maximum collector-emitter voltage of 45 V, making it suitable for a wide range of low power amplification and switching tasks in electronic devices. Its maximum power dissipation is rated at 300 mW, and it operates effectively up to a frequency of 100 MHz.

Key electrical characteristics include a minimum DC current gain of 40 and voltage limits such as 50 V collector-base and 5 V emitter-base maximum voltages. The transistor is designed for robust operation across a temperature range of -65°C minimum to 150°C maximum.

The compact dimensions of the SOT-23 package (3.4 mm length, 2.64 mm width, 1.1 mm height) allow for efficient PCB space utilization in surface mount designs. This part provides important protections including electrostatic discharge (ESD) protection, polarity reversal protection, data line protection, and inductive load protection, enhancing circuit reliability and durability.

While it does not feature automotive-specific standards, Pb-Free versions are available to support compliance with environmental regulations. The transistor is well suited for applications in industrial electronics, telecommunications, and consumer electronics where efficient switching and signal amplification are required.

The transistor supports a maximum collector-emitter voltage of 45 V. It operates with a maximum DC collector current of 500 mA. The device features a maximum power dissipation of 300 mW and a transition frequency of 100 MHz.

The minimum DC current gain (hFE) is 40, ensuring reliable amplification performance. The transistor is housed in a compact 3-Pin SOT-23 surface mount package. Operating temperature range is from -65°C to 150°C for versatile industrial use.

Includes protections for ESD, polarity reversal, and inductive loads. Explore more high-quality semiconductor components and Bipolar Transistors in the onsemi product range at EnvMart.