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onsemi N-Channel IGBT 50 A 650 V 3-Pin TO-247 Through Hole AFGHL50T65SQ
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Model | AFGHL50T65SQ |
| Mount Type | Through Hole |
| Series | Trench |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | AEC-Q101, RoHS |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 50A |
| Maximum Collector Emitter Voltage Vceo | 650V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.6V |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Power Dissipation Pd | 268W |
| Maximum Gate Emitter Voltage VGEO | ±3 V |
Key Features
- Supports a maximum continuous collector current of 50 amps.
- Maximum collector emitter voltage rating of 650 volts enables robust operation.
- Power dissipation up to 268 watts allows effective thermal management.
- Features through hole mounting with TO-247 package for easy integration.
- N-channel type enhances switching speed and efficiency.
- Maximum gate emitter voltage is ±3 volts for input control stability.
- Collector emitter saturation voltage is low at 1.6 volts for energy efficiency.
- Operates reliably within a temperature range of −55°C to 175°C.
Product Description
onsemi AFGHL50T65SQ is a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for robust power switching applications. Rated for a continuous collector current of 50 amperes and a maximum collector emitter voltage of 650 volts, this device is housed in a 3-pin TO-247 through hole package, facilitating ease of mounting and heat dissipation.
The transistor supports power dissipation levels up to 268 watts, ensuring reliable operation under demanding thermal conditions. Its N-channel trench technology provides fast switching capability and tight parameter distribution to meet stringent automotive standards, including AEC-Q101. The device features a maximum gate emitter voltage of ±3 volts and a low collector emitter saturation voltage of 1.6 volts, contributing to its overall efficiency and control precision.
With an operating temperature range from -55°C to 175°C, the AFGHL50T65SQ is well-suited for industrial, automotive, and power management applications requiring durable and compliant semiconductor components. It complies with RoHS directives, affirming its environmental safety and suitability for modern electronics manufacturing.
Supports a maximum continuous collector current of 50 amps. Rated maximum collector emitter voltage of 650 volts. Power dissipation capacity of up to 268 watts. Through hole mounting with TO-247 package type. N-Channel trench technology for fast switching.
Maximum gate emitter voltage of ±3 volts ensures gate stability. Low collector emitter saturation voltage of 1.6 volts minimizes losses. Wide operating temperature range from −55°C to 175°C. Conforms to automotive standard AEC-Q101 and RoHS compliance.
This transistor is ideal for use in automotive electronics, industrial power systems, renewable energy inverters, and motor control circuits. It delivers reliable performance in environments demanding high current capacity and voltage rating, while ensuring compliance with industry safety and environmental standards.
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Frequently Asked Questions
The AFGHL50T65SQ supports a maximum continuous collector current of 50 amps.
This model has a maximum collector emitter voltage rating of 650 volts, allowing for robust operation in various applications.
The power dissipation capacity of the AFGHL50T65SQ is up to 268 watts, ensuring effective thermal management during operation.
It features through hole mounting with a TO-247 package type, facilitating easy integration into circuits.
The AFGHL50T65SQ operates reliably within a temperature range of -55°C to 175°C.
The maximum gate emitter voltage for this model is ±3 volts, which ensures input control stability.
The collector emitter saturation voltage is low at 1.6 volts, contributing to energy efficiency.
Yes, it complies with the automotive standard AEC-Q101, ensuring it meets stringent performance requirements.
The AFGHL50T65SQ conforms to RoHS directives, affirming its environmental safety for modern electronics manufacturing.
This transistor is ideal for automotive electronics, industrial power systems, renewable energy inverters, and motor control circuits.
It utilizes an N-channel type, which enhances switching speed and efficiency in power applications.
The AFGHL50T65SQ has a pin count of 3, suitable for its TO-247 package configuration.
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