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| Country of Origin | China |
|---|---|
| Brand | STMicroelectronics |
| Height | 2.2mm |
| Length | 6.2mm |
| Model | STGD5NB120SZT4 |
| Width | 6.4mm |
| Mount Type | Surface |
| Series | H |
| Energy Rating | 12.68mJ |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | JEDEC JESD97, ECOPACK |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 5A |
| Maximum Collector Emitter Voltage Vceo | 1200V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 75W |
| Maximum Gate Emitter Voltage VGEO | ±20 V |
The STMicroelectronics STGD5NB120SZT4 is a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for power semiconductor applications requiring high efficiency and fast switching capabilities. Featuring a compact 3-pin TO-252 surface mount package, it is engineered for applications demanding robust power switching with a maximum continuous collector current of 5 A and voltage tolerance up to 1200 V.
This device integrates control features from MOSFETs with the low saturation voltage of bipolar transistors to create a reliable semiconductor switch ideal for industrial, automotive, and power management systems. It operates efficiently within a temperature range of -55°C to 150°C, ensuring stable performance in rigorous environments.
The STGD5NB120SZT4 carries certifications including JEDEC JESD97 and ECOPACK standards, emphasizing its reliability and environmental compliance. Compact dimensions (6.2 mm length, 6.4 mm width, 2.2 mm height) allow easy integration in space-sensitive circuit designs.
It is particularly suited for industrial automation, HVAC controls, renewable energy inverters, automotive electronics, and manufacturing applications requiring high voltage switching and energy-efficient power control.
This semiconductor device supports high efficiency and fast switching applications. The package features a length of 6.2 mm, width of 6.4 mm, and height of 2.2 mm. It operates reliably between -55°C and 150°C, complying with JEDEC JESD97 and ECOPACK standards.
The device has a maximum power dissipation of 75 W and a maximum gate emitter voltage of ±20 V. Switching speed is 690 ns, suitable for power control circuits. Energy rating is 12.68 mJ, ensuring robust performance in power electronics.
Pin count is 3, designed for surface mount assembly.
This product is a vital component for power electronics designers looking to optimize device efficiency and enhance system reliability. Explore more STMicroelectronics IGBTs at EnvMart for comprehensive power semiconductor solutions.
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