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STMicroelectronics N-Channel IGBT 5 A 1200 V 3-Pin TO-252 Surface Mount STGD5NB120SZT4

Category IGBT Brand STMicroelectronics Condition New

Specifications

Country of Origin China
Brand STMicroelectronics
Height 2.2mm
Length 6.2mm
Model STGD5NB120SZT4
Width 6.4mm
Mount Type Surface
Series H
Energy Rating 12.68mJ
Maximum Operating Temperature 150°C
Package Type TO-252
Minimum Operating Temperature -55°C
Standards/Approvals JEDEC JESD97, ECOPACK
Pin Count 3
Maximum Continuous Collector Current Ic 5A
Maximum Collector Emitter Voltage Vceo 1200V
Maximum Collector Emitter Saturation Voltage VceSAT 2V
Channel Type N
Maximum Power Dissipation Pd 75W
Maximum Gate Emitter Voltage VGEO ±20 V

Key Features

  • This semiconductor device supports high efficiency and fast switching applications.
  • The package features a length of 6.2 mm, width of 6.4 mm, and height of 2.2 mm.
  • It operates reliably between -55°C and 150°C, complying with JEDEC JESD97 and ECOPACK standards.
  • The device has a maximum power dissipation of 75 W and a maximum gate emitter voltage of ±20 V.
  • Switching speed is 690 ns, suitable for power control circuits.
  • Energy rating is 12.68 mJ, ensuring robust performance in power electronics.
  • Pin count is 3, designed for surface mount assembly.

Product Description

The STMicroelectronics STGD5NB120SZT4 is a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for power semiconductor applications requiring high efficiency and fast switching capabilities. Featuring a compact 3-pin TO-252 surface mount package, it is engineered for applications demanding robust power switching with a maximum continuous collector current of 5 A and voltage tolerance up to 1200 V.

This device integrates control features from MOSFETs with the low saturation voltage of bipolar transistors to create a reliable semiconductor switch ideal for industrial, automotive, and power management systems. It operates efficiently within a temperature range of -55°C to 150°C, ensuring stable performance in rigorous environments.

The STGD5NB120SZT4 carries certifications including JEDEC JESD97 and ECOPACK standards, emphasizing its reliability and environmental compliance. Compact dimensions (6.2 mm length, 6.4 mm width, 2.2 mm height) allow easy integration in space-sensitive circuit designs.

It is particularly suited for industrial automation, HVAC controls, renewable energy inverters, automotive electronics, and manufacturing applications requiring high voltage switching and energy-efficient power control.

This semiconductor device supports high efficiency and fast switching applications. The package features a length of 6.2 mm, width of 6.4 mm, and height of 2.2 mm. It operates reliably between -55°C and 150°C, complying with JEDEC JESD97 and ECOPACK standards.

The device has a maximum power dissipation of 75 W and a maximum gate emitter voltage of ±20 V. Switching speed is 690 ns, suitable for power control circuits. Energy rating is 12.68 mJ, ensuring robust performance in power electronics.

Pin count is 3, designed for surface mount assembly.

This product is a vital component for power electronics designers looking to optimize device efficiency and enhance system reliability. Explore more STMicroelectronics IGBTs at EnvMart for comprehensive power semiconductor solutions.

STMicroelectronics N-Channel IGBT 5 A 1200 V 3-Pin TO-252 Surface Mount STGD5NB120SZT4
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Frequently Asked Questions

The maximum collector emitter voltage (Vceo) of this IGBT is 1200 V.

The switching speed of this model is 690 ns, making it suitable for power control circuits.

This IGBT has a maximum continuous collector current of 5 A.

The dimensions of the TO-252 package are 6.2 mm in length, 6.4 mm in width, and 2.2 mm in height.

It operates reliably between -55°C and 150°C.

The maximum power dissipation for this model is 75 W.

The maximum gate emitter voltage (VGEO) is ±20 V.

This device complies with JEDEC JESD97 and ECOPACK standards, emphasizing its reliability and environmental compliance.

The energy rating of this IGBT is 12.68 mJ.

This model features a pin count of 3, designed for surface mount assembly.

It is particularly suited for industrial automation, HVAC controls, renewable energy inverters, and automotive electronics.

This IGBT uses an N-channel configuration.

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