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IXYS N-Channel IGBT Insulated Gate Bipolar Transistor 12 A 1700 V 3-Pin TO-247AD Through Hole IXGH6N170

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IXYS N-Channel IGBT Insulated Gate Bipolar Transistor 12 A 1700 V 3-Pin TO-247AD Through Hole IXGH6N170

Name: IXYS N-Channel IGBT Insulated Gate Bipolar Transistor 12 A 1700 V 3-Pin TO-247AD Through Hole IXGH6N170
Brand: IXYS
SKU: 395973
Price: 14.05 USD
Availability: InStock

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Category IGBT Brand IXYS Condition New

Specifications

Country of Origin	India
Brand	IXYS
Length	19.81mm
Model	IXGH6N170
Width	15.75mm
Mount Type	Through Hole
Series	High Voltage
Maximum Operating Temperature	150°C
Package Type	TO-247AD
Minimum Operating Temperature	-55°C
Standards/Approvals	International Standard Packages
Pin Count	3
Maximum Continuous Collector Current Ic	12A
Maximum Collector Emitter Voltage Vceo	1700V
Maximum Collector Emitter Saturation Voltage VceSAT	4V
Channel Type	N
Maximum Power Dissipation Pd	75W
Maximum Gate Emitter Voltage VGEO	±20 V
IXYS IXGH16N170, N-Channel IGBT, 32 A 1700 V, 3-Pin TO-247AD, Through HoleBrand	IXYS

Key Features

This IGBT features a maximum power dissipation of 75 W suitable for high voltage applications.
The device operates reliably over a temperature range from -55°C to 150°C.
Its maximum gate emitter voltage is ±20 V providing robust gate control.
The device exhibits a collector emitter saturation voltage of 4 V ensuring efficient switching.
Compact dimensions of 19.81 mm length and 15.75 mm width optimize PCB layout.
The IGBT combines MOSFET gate drive characteristics with bipolar transistor current capabilities.
It is widely used in power electronics, industrial automation, and motor control applications.
The package type TO-247AD is compatible with standard through-hole mounting technology.

Product Description

The IXYS IXGH6N170 is an N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for power applications requiring high voltage and current capabilities. Rated for a maximum continuous collector current of 12 A and a collector emitter voltage of 1700 V, this device is housed in a 3-pin TO-247AD package suited for through-hole mounting.

Its high power dissipation capacity of 75 W and robust operating temperature range from -55°C to 150°C enable reliable performance in demanding environments. The ±20 V maximum gate emitter voltage allows for effective control of the transistor gate, while the low saturation voltage of 4 V minimizes conduction losses, improving overall efficiency.

Measuring 19.81 mm in length and 15.75 mm in width, the package allows for efficient PCB footprint utilization. The IXGH6N170 combines the gate-drive simplicity characteristic of MOSFETs with the high current and low saturation voltage advantages of bipolar transistors, making it ideal for power switching applications.

This IGBT finds use in various industrial sectors including power electronics, motor control systems, and industrial automation where efficient, high voltage switching is essential. Its through-hole TO-247AD package is compatible with robust mounting and heat dissipation solutions, facilitating integration into power modules and assemblies.

Features include international standard compliance and a design optimized for high voltage operation. It is an indispensable component within high power semiconductor device categories.

This IGBT device supports maximum collector current of 12 A. Maximum collector emitter voltage rating is 1700 V suitable for high voltage switching. Power dissipation capability is 75 W ensuring thermal robustness. The TO-247AD package provides secure through-hole mounting and heat dissipation.

Operates efficiently with a max gate emitter voltage of ±20 V. Collector emitter saturation voltage at 4 V reduces conduction losses. Operating temperature spans from -55°C to 150°C covering harsh conditions. Compact device dimensions enable versatile circuit board design.

Explore more high voltage IGBT transistors and related power semiconductor devices within the Electronics & Electricals category on EnvMart.

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Frequently Asked Questions

The IXGH6N170 has a maximum continuous collector current rating of 12 A.

This model is rated for a maximum collector emitter voltage of 1700 V, making it suitable for high voltage applications.

The IXGH6N170 can handle a maximum power dissipation of 75 W, ensuring thermal robustness during operation.

It operates reliably over a temperature range from -55°C to 150°C, accommodating harsh conditions.

The maximum gate emitter voltage for this IGBT is ±20 V, allowing for effective control of the gate.

The collector emitter saturation voltage is 4 V, which helps to minimize conduction losses.

This IGBT measures 19.81 mm in length and 15.75 mm in width, optimizing PCB layout.

The IXGH6N170 is housed in a TO-247AD package, which is compatible with standard through-hole mounting technology.

It is widely used in power electronics, industrial automation, and motor control applications.

This model is an N-Channel Insulated Gate Bipolar Transistor (IGBT), combining MOSFET gate drive characteristics with bipolar transistor capabilities.

The IXGH6N170 complies with international standard packages, ensuring broad compatibility.

This device has a pin count of 3, suitable for its TO-247AD package configuration.