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IXYS N-Channel HiperFET Polar MOSFET 69 A 300 V Enhancement Mode, 3-Pin TO-247 IXFH69N30P
Specifications
| Country of Origin | India |
|---|---|
| Brand | IXYS |
| Height | 21.46mm |
| Length | 16.26mm |
| Model | IXFH69N30P |
| Width | 5.3mm |
| Mount Type | Through Hole |
| Series | HiperFET, Polar |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 69A |
| Maximum Drain Source Voltage Vds | 300V |
| Maximum Drain Source Resistance Rds | 49mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 500W |
| Typical Gate Charge Qg @ Vgs | 156nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.5V |
Key Features
- Operates at a maximum continuous drain current of 69 A.
- Maximum drain-source voltage rating of 300 V.
- Enhancement mode channel configuration for efficient switching.
- Housed in a durable TO-247 package with three pins for through-hole mounting.
- Low drain-source resistance of 49 milliohms to minimize power losses.
- Supports gate-source voltages up to ±20 V.
- Maximum power dissipation is rated at 500 W for high power applications.
- Operating temperature range spans from -55°C to 150°C for reliability.
Product Description
The IXYS IXFH69N30P is a high-performance N-Channel Power MOSFET from the HiperFET Polar series, engineered for industrial and electronic power switching applications.
Operating with a maximum continuous drain current of 69 A and capable of withstanding a drain-source voltage of up to 300 V, this device ensures robust performance and reliability.
The enhancement mode channel and the low drain-source resistance (49 mΩ) contribute to efficient switching and reduced conduction losses, making it ideal for power electronics design including inverters, power supplies, and motor control.
Encased in a TO-247 package with a 3-pin through-hole mount, the IXFH69N30P combines ease of installation with effective heat dissipation suitable for demanding conditions. The MOSFET supports a wide operating temperature range from -55°C to 150°C, suited for industrial environments.
Additional features include a typical gate charge of 156 nC at standard gate-source voltage, a forward voltage of 1.5 V, and it does not carry any standard approvals or automotive certifications.
Operates at a maximum continuous drain current of 69 A. Maximum drain-source voltage rating of 300 V. Enhancement mode channel configuration for efficient switching. Housed in a durable TO-247 package with three pins for through-hole mounting.
Low drain-source resistance of 49 milliohms to minimize power losses. Supports gate-source voltages up to ±20 V. Maximum power dissipation is rated at 500 W for high power applications. Operating temperature range spans from -55°C to 150°C for reliability.
Compact dimensions include length 16.26 mm, width 5.3 mm, and height 21.46 mm. Features a fast intrinsic diode characteristic suitable for power conversions.
This MOSFET is widely used in industrial, manufacturing, power management, and electronic component assembly sectors. Its high power capabilities and rugged design make it suited to demanding environments.
Explore more IXYS Power MOSFETs and related semiconductor components to ensure optimal design and efficiency in your electronic power systems.
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Frequently Asked Questions
The IXFH69N30P operates at a maximum continuous drain current of 69 A.
This model has a maximum drain-source voltage rating of 300 V.
It features an enhancement mode channel configuration for efficient switching.
The drain-source resistance is rated at 49 milliohms, which helps minimize power losses.
The maximum power dissipation is rated at 500 W, making it suitable for high power applications.
It operates within a temperature range of -55°C to 150°C, ensuring reliability in various environments.
The dimensions of the TO-247 package are 16.26 mm in length, 5.3 mm in width, and 21.46 mm in height.
It supports gate-source voltages up to ±20 V.
This MOSFET is widely used in industrial, manufacturing, power management, and electronic component assembly sectors.
The typical gate charge is 156 nC at standard gate-source voltage.
It is designed for through-hole mounting, which facilitates easy installation.
The IXFH69N30P does not carry any standard approvals or automotive certifications.
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