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Nexperia P-Channel Enhancement MOSFET 30 V, 10.3 A, 81 W Power Dissipation, 8-Pin MLPAK33 PXP013-30QLJ
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Model | PXP013-30QLJ |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | MLPAK33 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 10.3A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 13.6mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 81W |
| Maximum Gate Source Voltage Vgs | 20V |
Key Features
- Features MLPAK33 package with 8 pins for surface mounting.
- Maximum power dissipation of 81 W ensures robust performance.
- Low drain-source resistance of 13.6 mΩ for efficient conduction.
- Wide operating temperature range from -55°C to 175°C for harsh environments.
- Maximum gate-source voltage rating of 20 V supports reliable switching.
- Utilizes trench MOSFET technology with enhancement mode for high-side load switching applications.
- Ideal for battery management, DC-to-DC converters, and switching circuits.
- New product condition from a trusted semiconductor brand.
Product Description
Nexperia PXP013-30QLJ is a high-performance P-Channel enhancement mode MOSFET designed for reliable power switching applications. It operates at a maximum drain-source voltage of 30 V and can continuously handle drain current up to 10.3 A, with power dissipation rated at 81 W.
The device is housed in an MLPAK33 plastic surface-mounted package featuring 8 pins, optimized for compact PCB layout and excellent thermal characteristics. It employs trench MOSFET technology providing a low drain-source resistance of 13.6 mΩ, which enhances its conduction efficiency and reduces power loss.
This MOSFET supports a wide operating temperature range from -55°C to 175°C making it suitable for demanding industrial, automotive, and electronic power management applications. The maximum gate-source voltage is 20 V, allowing robust control under various switching conditions.
Typical use cases include high-side load switching, battery management systems, DC-to-DC conversion circuits, and other switching power electronics. The enhancement mode channel operation facilitates convenient gate driving and fast switching response.
MLPAK33 8-pin surface mount package. 10.3 A continuous drain current capacity. 30 V drain-source voltage rating. Low Rds(on) of 13.6 mΩ for improved efficiency. Wide temperature tolerance from -55°C to 175°C. Maximum power dissipation of 81 watts.
Enhancement mode trench MOSFET technology. Ideal for industrial, automotive, and power management applications.
This new Nexperia MOSFET is a reliable choice for semiconductor discrete power components, offering advanced performance and proven technology for modern electronics designs. Explore more power semiconductor solutions in the Electronics & Electrical category at EnvMart.
Explore more products in our Power MOSFET category.
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Frequently Asked Questions
The maximum continuous drain current for this model is 10.3 A.
The maximum drain-source voltage rating is 30 V.
It has a maximum power dissipation capacity of 81 W.
The drain-source resistance is 13.6 mΩ, which enhances conduction efficiency.
The operating temperature range is from -55°C to 175°C.
It is housed in an MLPAK33 package with 8 pins for surface mounting.
The maximum gate-source voltage rating is 20 V.
This model is a P-Channel enhancement mode MOSFET.
It is suitable for applications such as battery management, DC-to-DC converters, and high-side load switching.
It utilizes trench MOSFET technology for improved performance.
The low drain-source resistance of 13.6 mΩ improves conduction efficiency and reduces power loss.
The country of origin for this model is India.
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