Infineon N-Channel Power MOSFET 12 A, 100 V, 3-Pin TO-220 Package IPP129N10NF2SAKMA1

Infineon IPP129N10NF2SAKMA1 is a high-performance N-channel Power MOSFET designed for various industrial and electronic applications requiring efficient switching and high power handling.

This MOSFET supports a maximum continuous drain current of 12 A and can handle drain-source voltages up to 100 V, making it suitable for power supply circuits, motor drivers, DC-DC converters, and other power management systems.

The 3-pin TO-220 package ensures easy mounting on through-hole PCBs and effective thermal dissipation, with a maximum power dissipation of 71 W. Its low drain-source resistance of 12.9 milliohms minimizes conduction losses, improving overall circuit efficiency.

Operating across a broad temperature range from -55°C to 175°C, this device remains reliable in demanding industrial or automotive environments. The typical gate charge of 12 nC allows for fast switching speeds, complemented by a gate-source voltage limit of ±20 V to match standard gate drive circuits.

Physical dimensions of 10.36 mm in length, 4.57 mm in width, and 9.45 mm in height facilitate compact PCB designs while providing robust performance. Each unit is 100% avalanche tested, guaranteeing durability under transient voltage spikes, ensuring safe operations within power electronics and industrial automation sectors.

This Infineon MOSFET is ideal for applications in industrial controls, power supplies, automotive electronics, manufacturing equipment, and renewable energy systems. Explore more high-quality semiconductor components to optimize your industrial and electronic designs with EnvMart’s comprehensive product catalog.

Compact TO-220 3-pin package suitable for through-hole mounting. Maximum power dissipation rating of 71 W ensures robust thermal performance. Low maximum drain-source resistance of 12.9 milliohms reduces conduction losses.

Wide operating temperature range from -55°C to 175°C for demanding environments. Typical gate charge of 12 nC enables fast switching operations. Maximum gate-source voltage rating of ±20 V accommodates standard drive voltages.

Forward voltage drop of approximately 1.2 V enhances efficiency. Dimensions: Length 10.36 mm, Width 4.57 mm, Height 9.45 mm for easy PCB placement. 100% avalanche tested for reliable ruggedness under transient conditions.

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