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Infineon High Performance CMOS Static SRAM 2MB 128k x 16, 45ns Access Time, 22 Pin CY62136FV30LL-45ZSXI
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | CY62136FV30LL-45ZSXI |
| Maximum Operating Temperature | 85°C |
| Minimum Operating Temperature | -40°C |
| Memory size | 2MB |
| Standards/Approvals | RoHS |
| Pin Count | 22 |
| Organisation | 128k x 16 |
| Number of Bits per Word | 16 |
| Maximum Random Access Time | 45ns |
| Number of Words | 128k |
Key Features
- This SRAM offers ultra low active current for extended battery life in portable applications.
- Features automatic power down to minimize power consumption when idle.
- Complementary metal oxide semiconductor (CMOS) technology ensures optimum speed and power efficiency.
- Operates within a wide temperature range from -40°C to 85°C for reliable performance.
- Designed with 22 pins for versatile connectivity in electronic circuits.
- Complies with RoHS standards for environmental safety.
Product Description
Infineon CY62136FV30LL-45ZSXI Static SRAM is a high performance CMOS static RAM with a memory size of 2MB organized as 128k words by 16 bits. It features a maximum random access time of 45ns, supporting fast data retrieval for a variety of electronic applications.
This device utilizes advanced circuit design to provide ultra low active current, making it ideal for portable and battery-powered devices. The automatic power down feature significantly reduces power consumption when the device is not actively addressed, enhancing energy efficiency.
Constructed using complementary metal oxide semiconductor (CMOS) technology, this SRAM balances optimum speed with low power usage. It is designed to operate reliably over a temperature range from -40°C to 85°C, suitable for demanding industrial and commercial environments.
The chip includes 22 pins, offering standard package compatibility for integration into diverse electronic systems. Its compliance with RoHS standards ensures it meets current environmental and safety regulations.
This SRAM offers ultra low active current for extended battery life in portable applications. Features automatic power down to minimize power consumption when idle. Complementary metal oxide semiconductor (CMOS) technology ensures optimum speed and power efficiency.
Operates within a wide temperature range from -40°C to 85°C for reliable performance. Designed with 22 pins for versatile connectivity in electronic circuits. Complies with RoHS standards for environmental safety.
Infineon SRAM products are widely used in industrial electronics, computing, telecommunications, and embedded systems where high-speed memory and low power consumption are critical. Their robust design is suitable for manufacturing, laboratory instrumentation, and consumer electronic devices.
Explore more from Infineon's semiconductor range at EnvMart for reliable, high-performance memory solutions tailored to advanced electronic applications.
Explore more products in our SRAM Memory category.
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Frequently Asked Questions
The Infineon CY62136FV30LL-45ZSXI has a memory size of 2MB, organized as 128k words by 16 bits.
This SRAM features a maximum random access time of 45ns, allowing for fast data retrieval.
It operates reliably within a temperature range from -40°C to 85°C, making it suitable for various environments.
This model is designed with 22 pins, providing versatile connectivity options for electronic circuits.
The SRAM utilizes complementary metal oxide semiconductor (CMOS) technology, ensuring a balance of speed and power efficiency.
Yes, it complies with RoHS standards, ensuring it meets current environmental and safety regulations.
The memory is organized as 128k words by 16 bits, allowing for efficient data storage and retrieval.
It is widely used in industrial electronics, computing, telecommunications, and embedded systems where high-speed memory and low power consumption are critical.
It features ultra low active current and an automatic power down function to reduce power consumption when idle.
This SRAM has 16 bits per word, allowing for efficient data handling and processing.
The country of origin for this SRAM is India.
The ultra low active current makes it ideal for portable and battery-powered devices, extending battery life in such applications.
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