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Infineon High-Speed SRAM 16MB 1M x 16 Bit Asynchronous 3 - 3.6 V Surface Mount TSOP CY7C10612G30-10ZSXI
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 950μm |
| Length | 22.31mm |
| Model | CY7C10612G30-10ZSXI |
| Width | 10.06mm |
| Mount Type | Surface |
| Series | CY7C10612G |
| Maximum Operating Temperature | 85°C |
| Package Type | TSOP |
| Minimum Operating Temperature | -40°C |
| Memory size | 16MB |
| Pin Count | 54 |
| Maximum Supply Voltage | 3.6V |
| Minimum Supply Voltage | 3V |
| Supply Current | 110mA |
| Maximum Clock Frequency | 100MHz |
| Organisation | 1M x 16 Bit |
| Number of Bits per Word | 16 |
| Maximum Random Access Time | 10ns |
| Number of Words | 1M |
| Timing Type | Asynchronous |
Key Features
- High-speed asynchronous SRAM with a maximum random access time of 10ns.
- Operates at a maximum clock frequency of 100MHz for reliable performance.
- Wide operating voltage range from 3V minimum to 3.6V maximum.
- Compact 54-pin TSOP surface mount package measuring 22.31mm x 10.06mm with 950μm height.
- Operating temperature range from -40°C to 85°C for diverse environmental applications.
- Low active and standby current consumption improving power efficiency.
- Embedded ECC for single-bit error detection and correction.
- TTL compatible inputs and outputs with an ERR pin to indicate error detection.
Product Description
Infineon CY7C10612G30-10ZSXI is a high-speed SRAM Memory chip providing 16MB capacity arranged as 1M x 16 bit words, designed for asynchronous operation with a maximum random access time of 10 nanoseconds.
This surface mount device comes in a compact 54-pin Thin Small Outline Package (TSOP) featuring dimensions of 22.31mm length, 10.06mm width and a height of 950 microns, suitable for space-constrained electronic applications.
It operates efficiently over a voltage range of 3V minimum to 3.6V maximum and functions reliably across a wide temperature range from -40°C to 85°C, making it suitable for demanding industrial and electronic environments.
Power consumption is optimised with a typical supply current of 110mA during active operation and reduced CMOS standby current of 20mA, contributing to overall device longevity and energy savings.
The SRAM integrates an embedded error-correcting code (ECC) capable of single-bit error correction, with an ERR pin signaling detection, enhancing data integrity for critical applications.
Interface compatibility is assured with transistor-transistor logic (TTL) level inputs and outputs, making it straightforward to integrate into a variety of digital systems and semiconductor designs.
High-speed asynchronous SRAM with 10ns access time. Memory capacity of 16MB organised as 1M x 16 bit. 54-pin TSOP surface mount package with compact dimensions. Operating voltage range from 3.0V to 3.6V. Wide operating temperature from -40°C to 85°C.
Low active current and CMOS standby current for efficiency. Embedded ECC with single-bit error correction capability. TTL compatible I/O and ERR pin for error signaling.
This SRAM chip is well-suited for industrial electronics, embedded systems, communications equipment, and other semiconductor-based applications requiring fast and reliable memory performance.
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Frequently Asked Questions
The maximum random access time of this SRAM is 10 nanoseconds.
This model has a memory capacity of 16MB, organized as 1M x 16 bit words.
It operates within a voltage range of 3.0V to 3.6V.
The SRAM comes in a 54-pin TSOP package with dimensions of 22.31mm in length, 10.06mm in width, and a height of 950μm.
The maximum clock frequency for this SRAM is 100MHz.
The operating temperature range for this unit is from -40°C to 85°C.
It features embedded error-correcting code (ECC) capable of single-bit error correction.
The typical supply current during active operation is 110mA.
It supports TTL compatible inputs and outputs, along with an ERR pin for error signaling.
This SRAM has a pin count of 54.
The mount type for this memory chip is surface mount.
This SRAM is suitable for industrial electronics, embedded systems, and communications equipment.
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