Vishay P-Channel Power MOSFET 60 V 11 A Surface Mount TO-263 Package IRF9Z24SPBF

Vishay IRF9Z24SPBF is a P-Channel power MOSFET designed for applications requiring a maximum continuous drain current of 11 A and maximum drain-source voltage of 60 V. The device comes in a TO-263 surface mount package, facilitating compact PCB designs and efficient heat dissipation.

The MOSFET offers a low drain-source resistance of 0.28 ohms at 10 V gate drive, which minimizes conduction losses and improves energy efficiency in power management circuits. It supports a maximum power dissipation of 60 W, allowing reliable operation under high thermal loads.

With a typical gate charge of 19 nC and a maximum gate-source voltage rating of ±20 V, the IRF9Z24SPBF ensures swift switching and robust gate protection. Its operational temperature range from -55°C up to 175°C makes it suitable for use in demanding industrial and automotive environments.

This single transistor device complies with RoHS standards, ensuring it meets environmental protection regulations. Maximum continuous drain current of 11 A ensures robust performance. Maximum drain-source voltage of 60 V supports moderate voltage applications.

Low drain-source on-resistance of 0.28 ohms at 10 V gate drive reduces power loss. Maximum power dissipation rated at 60 W for thermal reliability. Typical gate charge of 19 nC enables efficient switching operation. Wide operating temperature range from -55°C to 175°C for harsh environments.

Single transistor configuration with surface mount TO-263 package. Maximum gate-source voltage of ±20 V to protect gate oxide. Compliance with RoHS standards ensures environmental safety.

This power MOSFET is ideal for industrial, automotive, power management, and electronic component applications requiring robust and efficient switching devices. Browse more Power MOSFETs and semiconductor components at EnvMart for your electronic assembly needs.