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Vishay Single 1 N-Channel Power MOSFET 3.3 A 500 V Maximum Power Dissipation 83 W IRFR420APBF
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Model | IRFR420APBF |
| Maximum Operating Temperature | 150°C |
| Minimum Operating Temperature | -55°C |
| Number of Elements per Chip | 1 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 3.3A |
| Maximum Drain Source Voltage Vds | 500V |
| Maximum Drain Source Resistance Rds | 3Ω |
| Maximum Power Dissipation Pd | 83W |
| Typical Gate Charge Qg @ Vgs | 17nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.6V |
| Transistor Configuration | Single |
Key Features
- Maximum continuous drain current is 3.3 A ensuring stable operation under load.
- Drain-source voltage rating of 500 V supports high voltage applications.
- Low drain-source resistance of 3 ohms at 10 V gate drive reduces conduction losses.
- Maximum power dissipation of 83 W allows efficient heat management.
- Operating temperature range is from -55°C to 150°C suitable for harsh environments.
- Gate-source voltage maximum rating of 30 V protects gate from overvoltage.
- Typical gate charge of 17 nC enables fast switching with low drive power.
- Single transistor configuration simplifies circuit design.
Product Description
Vishay IRFR420APBF is a single channel N-Channel Power MOSFET engineered to provide efficient power switching with a maximum continuous drain current of 3.3 A and a drain-source voltage rating of 500 V. Rated for maximum power dissipation of 83 W, it ensures reliable operation in demanding applications.
This MOSFET features a low drain-source resistance of 3 ohms at a gate voltage of 10 V, minimizing conduction losses, and a maximum gate-source voltage of 30 V to protect device integrity. It operates efficiently across an extended temperature range from -55°C up to 150°C, making it suitable for industrial, automotive, and commercial electronic power management.
Manufactured without halogens and lead, the IRFR420APBF supports environmentally conscious designs. Its typical gate charge of 17 nC provides for fast switching speeds and low gate drive power, enhancing system performance.
Its applications include high-speed power switching, switch mode power supplies (SMPS), and uninterruptible power supplies (UPS), among others where efficient and reliable power control is critical.
Maximum continuous drain current of 3.3 A for high power capability. Drain-source voltage rating of 500 V ideal for medium to high voltage circuits. Low Rds(on) value minimizes power loss and heat generation. High power dissipation rating supports enhanced thermal management.
Wide operating temperature range from -55°C to 150°C allows deployment in harsh environments. Gate voltage tolerance up to 30 V ensures robust gate protection. Single transistor design simplifies integration in circuits.
Environmentally friendly, halogen and lead-free construction. Optimized for low switching and conduction losses. Applications include industrial power management and automotive systems.
This Vishay MOSFET represents a reliable choice for engineers designing efficient power electronic circuits. Explore our electronics catalog for a broad range of semiconductors and power management components to suit diverse industrial, laboratory, and commercial applications.
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Frequently Asked Questions
The maximum continuous drain current for the IRFR420APBF is 3.3 A, ensuring stable operation under load.
This model has a maximum drain-source voltage rating of 500 V, making it suitable for medium to high voltage applications.
The maximum power dissipation for this MOSFET is 83 W, which supports efficient heat management in demanding applications.
The typical gate charge for the IRFR420APBF is 17 nC, enabling fast switching with low drive power.
The drain-source resistance of this MOSFET is 3 ohms at a gate drive of 10 V, which helps to reduce conduction losses.
The maximum gate-source voltage rating is 30 V, which protects the gate from overvoltage conditions.
This model uses a single transistor configuration, simplifying circuit design and integration.
It is suitable for high-speed power switching, switch mode power supplies (SMPS), and uninterruptible power supplies (UPS).
The forward voltage for the IRFR420APBF is 1.6 V, which is relevant for its operation in circuits.
The IRFR420APBF is manufactured without halogens and lead, supporting environmentally conscious designs.
The country of origin for this MOSFET is China.
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