$4.24
$4.12
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
ROHM Power MOSFET N-Channel 24 A, 600 V, Enhancement Mode, 3-Pin TO-263 Package R6024ENJTL
Specifications
| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Height | 4.7mm |
| Length | 10.4mm |
| Model | R6024ENJTL |
| Width | 9.2mm |
| Mount Type | Surface |
| Series | R6024ENJ |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 24A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 320mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 245W |
| Typical Gate Charge Qg @ Vgs | 70nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.5V |
Key Features
- Supports a maximum continuous drain current of 24 amperes.
- Maximum drain-source voltage rating of 600 volts ensures high voltage tolerance.
- Utilizes enhancement mode operation suitable for low ON-resistance switching.
- Compact TO-263 package with surface mount design for easy PCB integration.
- Maximum power dissipation capability of 245 watts enables operation in demanding environments.
- Operates reliably within a temperature range from -55°C to 150°C.
- Low typical gate charge of 70 nanocoulombs facilitates fast switching speeds.
- Maximum gate-source voltage rating of ±30 volts ensures robust gate control.
Product Description
ROHM R6024ENJTL Power MOSFET is a high-performance N-Channel enhancement mode MOSFET suitable for industrial and electronic applications requiring efficient power switching and high voltage tolerance. It features a maximum continuous drain current of 24 A and voltage rating of 600 V, making it ideal for power management circuits.
The device comes in a TO-263 package with 3 pins designed for surface mount technology. It supports a maximum power dissipation of 245 W and can operate in harsh environments between -55°C and 150°C, providing durability and reliability.
Key technical advantages include low ON-resistance contributing to reduced power loss, and a typical gate charge of 70 nC at a gate-source voltage of 70 V, allowing for fast switching performance. The gate-source voltage rating of ±30 V ensures safe and stable gate control. Additionally, the forward voltage drop of 1.5 V minimizes conduction losses associated with switching applications.
This MOSFET is Pb-free with lead plating compliant with environmental standards, designed to accommodate simple and efficient drive circuits with easy parallel use. While it lacks automotive or specific industrial certification, it serves a broad range of applications in power electronics, battery management, and industrial control systems.
Supports a maximum continuous drain current of 24 amperes. Maximum drain-source voltage rating of 600 volts for high voltage applications. Low ON-resistance enables energy efficient switching. Compact TO-263 3-pin surface mount package for PCB integration.
Reliable operation from -55°C to 150°C ambient temperature. Fast switching speed due to low gate charge of 70 nC. Safe gate control voltage of ±30 volts. Power dissipation capacity of 245 watts for demanding usage. Lead-free compliant with environmental regulations.
Suitable for industrial, electronic components, power management, and semiconductor applications. Explore a wide range of Power MOSFETs and semiconductor devices in EnvMart’s comprehensive Electronics & Electricals category.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The ROHM R6024ENJTL Power MOSFET supports a maximum continuous drain current of 24 amperes.
It has a maximum drain-source voltage rating of 600 volts, ensuring high voltage tolerance for various applications.
This MOSFET can dissipate a maximum power of 245 watts, making it suitable for demanding environments.
The typical gate charge at a gate-source voltage of 70 V is 70 nanocoulombs, facilitating fast switching speeds.
The dimensions of the TO-263 package are 10.4 mm in length, 9.2 mm in width, and 4.7 mm in height.
It operates reliably within a temperature range from -55°C to 150°C.
The maximum gate-source voltage rating is ±30 volts, ensuring robust gate control.
The forward voltage drop is 1.5 volts, which helps minimize conduction losses in switching applications.
This model features a surface mount design, suitable for easy PCB integration.
It is an N-Channel enhancement mode MOSFET, designed for efficient power switching.
This MOSFET is suitable for applications in power management, battery management, and industrial control systems.
The maximum drain-source resistance is 320 milliohms, contributing to low ON-resistance for energy-efficient switching.
Related Products
Other Products from this brand
$0.26
$0.25
-3%
New
Recently Viewed Products
$4.24
$4.12
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent