World's First Climate Tech Platform | Free Delivery in India | Global Shipping

Become Seller

For Bulk Enquiry: sales@envmart.com

Shopping Cart $0.00

onsemi N-Channel MOSFET 150 V 101 A 3-Pin TO-220 Surface Mount Enhancement Mode NTP7D3N15MC

Free Delivery in India | Lowest Global Shipping Charges

onsemi N-Channel MOSFET 150 V 101 A 3-Pin TO-220 Surface Mount Enhancement Mode NTP7D3N15MC

Name: onsemi N-Channel MOSFET 150 V 101 A 3-Pin TO-220 Surface Mount Enhancement Mode NTP7D3N15MC
Brand: onsemi
SKU: 412108
Price: 3.59 USD
Availability: InStock



Category Power MOSFET Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	4.83mm
Length	10.53mm
Model	NTP7D3N15MC
Width	15.75mm
Mount Type	Surface
Series	NTP
Maximum Operating Temperature	175°C
Package Type	TO-220
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	101A
Maximum Drain Source Voltage Vds	150V
Maximum Drain Source Resistance Rds	7.3mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	2.4W
Typical Gate Charge Qg @ Vgs	53nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	1.2V

Key Features

Maximum continuous drain current is 101 A, suitable for high current applications.
Maximum drain-source voltage of 150 V ensures good voltage handling capability.
Low maximum drain-source resistance of 7.3 mΩ reduces conduction losses.
Enhancement mode channel operation enables efficient switching.
Maximum power dissipation is 2.4 W, supporting moderate thermal loads.
Operating temperature ranges from -55°C to 175°C for reliable performance.
Typical gate charge is 53 nC at Vgs, facilitating fast switching speeds.
Maximum gate-source voltage of 20 V protects gate under transient conditions.

Product Description

onsemi NTP7D3N15MC is a high current N-Channel MOSFET designed for power electronics applications. It features a drain-to-source voltage rating of 150 V and maximum continuous drain current of 101 A, providing robust performance for synchronous rectification, micro solar inverters, and other demanding circuits.

This device employs enhancement mode operation with shielded gate MOSFET technology to ensure efficient switching and reduced power loss. Its low maximum drain-source resistance of 7.3 mΩ minimizes conduction losses during operation.

The compact TO-220 package facilitates easy mounting on printed circuit boards, supporting surface mount applications. Thermal management is secured with a maximum power dissipation of 2.4 W and an operating temperature range from -55°C to 175°C, enabling usage in harsh industrial environments.

Additional characteristics such as a typical gate charge of 53 nC at Vgs and maximum gate-source voltage of 20 V make this MOSFET well-suited for high-speed switching and protection against transient voltage spikes. The forward voltage of 1.2 V further enhances efficiency during conduction phases.

High maximum continuous drain current of 101 A for demanding load conditions. 150 V maximum drain-source voltage for medium voltage applications. Low drain-source ON resistance ensures energy efficiency. Wide operating temperature range supports industrial and automotive use.

Compact three-pin TO-220 package for easy thermal and electrical integration. Enhancement type channel provides reliable switching performance.

Typical applications include industrial power control, renewable energy inverters, motor drives, and power supply units. This MOSFET is RoHS compliant and Pb-free, aligning with modern environmental standards.

Explore the full range of discrete semiconductors and Power MOSFETs by onsemi on EnvMart for your industrial and electronics manufacturing needs.