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| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 1.5mm |
| Length | 4.95mm |
| Model | DMP4025LSD-13 |
| Width | 3.95mm |
| Mount Type | Surface |
| Maximum Operating Temperature | +150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | MIL-STD-202, RoHS, AEC-Q101, UL 94V-0, J-STD-020 |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Automotive Standard | AEC-Q100, AEC-Q101, AEC-Q200 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 5.8A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 45mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.14W |
| Typical Gate Charge Qg @ Vgs | 14nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -0.7V |
| Transistor Configuration | Isolated |
DiodesZetex DMP4025LSD-13 is a specialized isolated dual P-Channel power MOSFET designed for surface mount in an 8-pin SOIC package. With a maximum continuous drain current of 5.8 A and a maximum drain-source voltage of 40 V, it provides robust performance for power switching applications in electronic circuits.
Operating in enhancement mode, this MOSFET maintains a low maximum drain-source resistance of 45 mΩ, ensuring efficient conduction and low power losses. It supports a maximum power dissipation of 2.14 W and can reliably operate across a wide temperature range from -55°C to +150°C, suitable for industrial and automotive environments.
The device’s typical gate charge of 14 nC at Vgs allows for faster switching speeds, improving overall circuit switching efficiency. Its transistor configuration is isolated, which is beneficial for integration into complex circuitry.
The DMP4025LSD-13 package dimensions are compact with a length of 4.95 mm, width of 3.95 mm, and a height of 1.5 mm, making it ideal for space-constrained designs. It complies with multiple automotive and industrial standards including AEC-Q100, AEC-Q101, AEC-Q200, MIL-STD-202, RoHS, UL 94V-0, and J-STD-020 ensuring reliability and environmental compliance.
This Power MOSFET is suitable for use in electronic components, power switches, and driver circuitry within automotive, industrial control, power management, and consumer electronic applications.
The MOSFET features an 8-pin SOIC surface mount package ensuring compactness. It operates with enhancement mode channel characteristics for efficient switching. Maximum power dissipation is rated at 2.14 W for thermal reliability.
It supports a typical gate charge of 14 nC at Vgs, enabling fast switching performance. The device withstands operating temperatures from -55°C up to +150°C. Offers a low drain-source resistance of 45 mΩ for minimal conduction losses.
Includes automotive standards compliance like AEC-Q100, AEC-Q101, and AEC-Q200 ensuring high reliability. Complies with key certifications such as MIL-STD-202, RoHS, UL 94V-0, and J-STD-020 standards. Explore more high-performance MOSFETs and discrete semiconductors from DiodesZetex on EnvMart for your advanced electronics design needs.
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