Vishay N-Channel Power MOSFET 60 V 204 A Enhancement Mode 125 W SO-8 Package SiDR626LDP-T1-RE3

Vishay SiDR626LDP-T1-RE3 is a high-performance N-Channel Power MOSFET optimized for applications demanding high current handling at low voltage levels. It features an Enhancement Mode channel, accommodating a maximum continuous drain current of 204 A and a maximum drain-source voltage of 60 V. Encapsulated in a compact SO-8 surface mount package, this device supports a maximum power dissipation rating of 125 W, ensuring reliability under demanding operational loads.

The MOSFET operates over a broad temperature range from -55°C to 150°C, making it durable for harsh industrial and electronic environments. It includes a low drain-source resistance (Rds) of 1.2 milliohms, which is critical for power efficiency and minimizing losses. Typical gate charge is 41 nC at Vgs, with a maximum gate-source voltage of 20 V, facilitating fast switching performance ideal for power management circuits.

The device incorporates Vishay's TrenchFET® Gen IV technology, delivering superior figure-of-merit (FOM) characteristics for enhanced efficiency and thermal performance. A top-side cooling feature further contributes to effective heat dissipation, making it suitable for power electronics, industrial control systems, and automotive applications requiring robust semiconductor components.

This N-Channel MOSFET is surface mountable, enabling seamless integration into printed circuit boards (PCBs) for compact electronic designs. Its 8-pin SO-8 package and precise dimensions (5.9 mm length, 4.9 mm width, and 510 μm height) enable high-density mounting. The device has been rigorously tested for robustness, including Rg and UIS testing, ensuring consistency and reliability in demanding applications.

Applications include power converters, motor drivers, power amplifiers, and other industrial and electronic equipment requiring efficient high-current switching components. Features an SO-8 surface mount package suitable for compact PCB layouts.

Offers a low maximum drain-source resistance of 1.2 milliohms enhancing efficiency. Supports a maximum power dissipation of 125 W for robust performance. Operates reliably within a temperature range of -55°C to 150°C. Includes a maximum gate-source voltage of 20 V and typical gate charge of 41 nC for optimized switching.

Constructed using TrenchFET® Gen IV technology for improved figure-of-merit characteristics. Top side cooling feature enables effective thermal management in industrial applications. Ideal for use in power electronics, industrial machinery, and electronic component assemblies.

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