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Vishay N-Channel Depletion Mode MOSFET PowerPAK SO-8, 48.1 A, 60 V, 8-Pin SIR574DP-T1-RE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Model | SIR574DP-T1-RE3 |
| Width | 5.15mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 125°C |
| Package Type | PowerPAK SO-8 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 48.1A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 0.01Ω |
| Channel Mode | Depletion |
| Maximum Power Dissipation Pd | 83W |
| Typical Gate Charge Qg @ Vgs | 56nC |
| Maximum Gate Source Voltage Vgs | 20V |
Key Features
- Maximum continuous drain current of 48.1 amperes ensures robust current handling capability.
- Maximum drain-source voltage rating of 60 volts suitable for medium voltage applications.
- Surface mounting in the compact PowerPAK SO-8 package with 8 pins.
- Extremely low drain-source resistance of 0.01 ohms reduces power loss and heat generation.
- Maximum power dissipation of 83 watts supports high power operations.
- Typical gate charge of 56 nanocoulombs at maximum gate-source voltage ensures fast switching performance.
- Wide operating temperature range from -55°C to 125°C for automotive and industrial environments.
- Complies with automotive standard AEC-Q101 for automotive reliability and quality.
Product Description
Vishay SIR574DP-T1-RE3 is a high-performance automotive Grade 4 TrenchFET® N-Channel MOSFET designed with depletion channel mode, optimized for power applications requiring efficient switching and thermal management. The device is housed in a surface mount PowerPAK SO-8 8-pin package and supports a maximum continuous drain current of 48.1 amps and a drain-source voltage up to 60 volts.
This MOSFET features an extremely low Rds(on) resistance of just 0.01 ohms, which minimizes conduction losses and heat generation during operation, making it highly suitable for power supplies, motor drive controls, and synchronous rectification circuits found in industrial and automotive applications.
The device supports a wide operating temperature range from -55°C to 125°C, ensuring dependable performance in harsh automotive and industrial environments. Its gate charge characteristics facilitate fast switching speeds and improved efficiency.
Additional key features include a maximum power dissipation rating of 83 watts and compliance with the automotive industry standard AEC-Q101, which certifies it for automotive-grade reliability.
Typical applications span power supply units, synchronous rectification, motor drives, and other electronic circuits requiring reliable high-current N-Channel MOSFETs. Maximum continuous drain current of 48.1 amperes. Maximum drain-source voltage rating of 60 volts.
Extremely low drain-source resistance of 0.01 ohms. Typical gate charge of 56 nanocoulombs for efficient switching. PowerPAK SO-8 package with 8 pins for surface mounting. Wide operating temperature range (-55°C to 125°C).
Automotive standard compliance AEC-Q101. Explore more high-quality MOSFETs and semiconductor devices optimized for industrial and automotive electronics on EnvMart.
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