Infineon CoolMOS CP N-Channel MOSFET, 60 A Continuous Drain Current, 650 V Drain Source Voltage, TO-247 IPW60R045CPFKSA1

Infineon IPW60R045CPFKSA1 is a high-performance CoolMOS CP N-Channel MOSFET designed for power electronic applications requiring high efficiency and reliability. It supports a maximum continuous drain current of 60 amperes and can withstand a maximum drain-source voltage of 650 volts. Packaged in a 3-pin TO-247 through-hole format, this device is suited for industrial, power management, and electronic manufacturing contexts.

This MOSFET operates in enhancement mode and features a low maximum drain-source resistance of 45 milliohms, which helps minimize power loss and heat generation during conduction. The device also has a typical gate charge of 150 nanocoulombs, enabling fast switching speeds that benefit switching power supplies and motor control systems.

The forward voltage of 1.2 volts offers efficient conduction while the robust gate-source voltage rating of -20 to +20 volts provides reliable gate control and protection. Rated for a maximum power dissipation of 431 watts, the MOSFET can sustain high power loads in demanding industrial and commercial electronic applications.

The device is rated for a wide operating temperature range from -55°C to 150°C, ensuring stable performance under harsh environmental conditions. Its TO-247 package features thermal efficiency and easy mounting in through-hole circuit designs.

Capable of handling continuous drain current up to 60 amperes. Maximum drain-source voltage rating of 650 volts. Standard TO-247 through-hole package with 3 pins. Typical gate charge of 150 nanocoulombs at gate-source voltage.

Maximum power dissipation of 431 watts ensures reliable performance. Operating temperature range from -55°C to 150°C. Low maximum drain-source resistance of 45 milliohms reduces conduction losses. Forward voltage drop of 1.2 volts contributes to efficiency.

Designed for enhancement mode operation with N-channel type. Robust gate-source voltage tolerance of -20 V to +20 V.

This MOSFET is ideal for industrial power supplies, manufacturing equipment, motor controls, and other electronics that demand high power efficiency and thermal reliability. Its compact TO-247 package simplifies integration into standard electronic assemblies.

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