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Nexperia N-Channel MOSFET 375 mA, 240 V, Enhancement Mode, 3-Pin SOT-223 BSP89,115
Specifications
| Country of Origin | China |
|---|---|
| Brand | Nexperia |
| Height | 1.7mm |
| Length | 6.7mm |
| Model | BSP89,115 |
| Width | 3.7mm |
| Mount Type | Surface |
| Series | BSP89 |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 375mA |
| Maximum Drain Source Voltage Vds | 240V |
| Maximum Drain Source Resistance Rds | 7.5Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.5W |
| Maximum Gate Source Voltage Vgs | -20, +20V |
Key Features
- Supports enhancement mode operation ensuring efficient switching.
- Maximum continuous drain current of 375 mA for reliable circuit performance.
- Rated for 240 V maximum drain-source voltage suitable for various power applications.
- Compact SOT-223 surface mount package with 3 pins for versatile PCB mounting.
- Maximum power dissipation up to 1.5 W ensures thermal stability under load.
- Wide operating temperature range from -55°C to 150°C for industrial environments.
- Low maximum drain-source resistance of 7.5 Ω for energy-efficient operation.
- Maximum gate-source voltage rating of -20 V to +20 V for robust gate control.
Product Description
The Nexperia BSP89,115 is a high-performance N-Channel MOSFET designed for discrete semiconductor applications requiring up to 375 mA continuous drain current and a maximum drain-source voltage of 240 V. It operates in enhancement mode and is packaged in a compact 3-pin SOT-223 surface mount package, enabling efficient integration into modern printed circuit boards. The transistor supports power dissipation up to 1.5 W, allowing for reliable operation in various electronic circuits.
With a low maximum drain-source resistance of 7.5 Ω, the BSP89,115 offers efficient conduction and minimal power loss, making it suitable for a broad range of power switching and amplification applications. The device's wide operating temperature capability from -55°C to 150°C allows it to withstand harsh industrial and commercial operating environments.
This MOSFET is especially useful in power management, signal switching, and amplification tasks within industrial, electronic, and manufacturing sectors. Its robust gate-source voltage range (-20 V to +20 V) offers enhanced control and stability in electronic switching circuits.
Manufactured under stringent quality controls in China, this component meets typical industrial standards though no specific automotive or certification approvals apply. The product is ideal for designers and engineers requiring a reliable, compact, and efficient discrete MOSFET solution.
Supports enhancement mode operation ensuring efficient switching. Maximum continuous drain current of 375 mA for reliable circuit performance. Rated for 240 V maximum drain-source voltage suitable for various power applications.
Compact SOT-223 surface mount package with 3 pins for versatile PCB mounting. Maximum power dissipation up to 1.5 W ensures thermal stability under load. Wide operating temperature range from -55°C to 150°C for industrial environments.
Low maximum drain-source resistance of 7.5 Ω for energy-efficient operation. Maximum gate-source voltage rating of -20 V to +20 V for robust gate control. Manufactured in China under strict quality standards.
Explore more electronic components and semiconductor solutions in the discrete semiconductors category at EnvMart to find complementary parts and power management devices to enhance your application designs.
Explore more products in our MOSFETs category.
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Frequently Asked Questions
The maximum continuous drain current for this model is 375 mA, ensuring reliable circuit performance.
The BSP89,115 has a maximum drain-source voltage rating of 240 V, making it suitable for various power applications.
It supports a maximum power dissipation of up to 1.5 W, which ensures thermal stability under load conditions.
This MOSFET is packaged in a compact SOT-223 surface mount package with 3 pins, allowing for versatile PCB mounting.
The operating temperature range for this model is from -55°C to 150°C, suitable for industrial environments.
The maximum gate-source voltage rating for this MOSFET is -20 V to +20 V, providing robust gate control.
The maximum drain-source resistance is 7.5 Ω, which contributes to energy-efficient operation.
This model is particularly useful in power management, signal switching, and amplification tasks within industrial and electronic sectors.
The BSP89,115 features an N-channel type, designed for enhancement mode operation.
It is manufactured in China under stringent quality controls, meeting typical industrial standards.
The dimensions of this model are 6.7 mm in length, 3.7 mm in width, and 1.7 mm in height.
This MOSFET belongs to the BSP89 series, which includes various models designed for discrete semiconductor applications.
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