$0.62
$0.60
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Infineon CoolMOS N-Channel MOSFET, 10 A, 700 V Enhancement Mode, 3-Pin TO-251 Package IPSA70R450P7SAKMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 6.1mm |
| Length | 6.6mm |
| Model | IPSA70R450P7SAKMA1 |
| Width | 2.38mm |
| Mount Type | Surface |
| Series | CoolMOS |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-251 |
| Minimum Operating Temperature | -40°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 10A |
| Maximum Drain Source Voltage Vds | 700V |
| Maximum Drain Source Resistance Rds | 450mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 50W |
| Typical Gate Charge Qg @ Vgs | 13.1nC |
| Maximum Gate Source Voltage Vgs | 16V |
| Forward Voltage Vf | 900mV |
Key Features
- Supports a maximum continuous drain current of 10 A for demanding electrical loads.
- Operates with a maximum drain-source voltage of 700 V suitable for high-voltage applications.
- Features enhancement-mode channel operation providing efficient control.
- Low drain-source resistance of 450 milliohm reduces conduction losses.
- Typical gate charge of 13.1 nC facilitates fast switching and low gate drive power.
- Maximum gate-source voltage rating of 16 V ensures safe gate drive limits.
- Forward voltage drop of 900 mV improves energy efficiency under conduction.
- Maximum power dissipation rated at 50 W supports high thermal loads.
Product Description
Infineon Technologies presents the IPSA70R450P7SAKMA1, a CoolMOS N-Channel MOSFET designed for high voltage power applications requiring efficient switching and thermal performance. Operating at a continuous drain current of 10 A and a drain-source voltage of 700 V, this enhancement-mode transistor utilizes super junction technology to optimize performance.
The device features a surface mount TO-251 package with 3 pins, making it suitable for compact circuit designs. Its low drain-source resistance of 450 mΩ and typical gate charge of 13.1 nC contribute to minimal energy loss and fast switching capabilities, ideal for consumer electronics such as chargers, adapters, lighting, and television equipment.
Designed to meet practical application demands, the MOSFET supports a maximum gate-source voltage of 16 V and can dissipate up to 50 W of power, ensuring durability in high-load scenarios. It operates reliably within a temperature range from -40°C to 150°C, allowing use in diverse environmental conditions.
Physical dimensions of 6.6 mm in length, 2.38 mm in width, and 6.1 mm in height facilitate integration into space-constrained electronic assemblies. The unit does not carry additional certifications or automotive standards but benefits from Infineon's CoolMOS technology, which enhances efficiency and thermal behavior with integrated ESD protection diode.
Supports 10 A continuous drain current. Rated for 700 V maximum drain-source voltage. Enhancement mode with low drain-source resistance. Typical gate charge of 13.1 nC for efficient switching. Maximum gate-source voltage of 16 V maximum.
Forward voltage drop of 900 mV. Power dissipation up to 50 W. Wide operating temperature range from -40°C to 150°C. Compact TO-251 surface mount package with 3 pins. Dimensions: 6.6 mm length x 2.38 mm width x 6.1 mm height.
This Infineon CoolMOS MOSFET is well suited for industrial, consumer electronics, power management, and switching applications requiring reliable high voltage and current handling with improved energy efficiency and thermal performance.
Explore more semiconductor products and power components in the Electronics & Electricals category at EnvMart for your design and manufacturing needs.
Explore more products in our MOSFETs category.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current of this model is 10 A, suitable for demanding electrical loads.
It operates with a maximum drain-source voltage of 700 V, making it suitable for high-voltage applications.
The typical gate charge is 13.1 nC, which facilitates fast switching and low gate drive power.
The maximum gate-source voltage rating is 16 V, ensuring safe gate drive limits.
This model has dimensions of 6.6 mm in length, 2.38 mm in width, and 6.1 mm in height.
It supports a maximum power dissipation of 50 W, which is suitable for high thermal loads.
The low drain-source resistance is rated at 450 milliohm, which helps reduce conduction losses.
The operating temperature range is from -40°C to 150°C, allowing use in diverse environmental conditions.
It comes in a TO-251 surface mount package with 3 pins, suitable for compact circuit designs.
This model is well suited for industrial, consumer electronics, power management, and switching applications.
The forward voltage drop is 900 mV, which improves energy efficiency under conduction.
It features an N-channel type with enhancement mode operation for efficient control.
Related Products
Other Products from this brand
$19.84
$19.24
-3%
New
Recently Viewed Products
$0.62
$0.60
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent