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STMicroelectronics MDmesh K5 Series SuperMESH5 N-Channel MOSFET 3 A 800 V Enhancement 3-Pin TO-220 STP4N80K5
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 15.75mm |
| Length | 10.4mm |
| Model | SuperMESH5 |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | MDmesh K5, SuperMESH5 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 3A |
| Maximum Drain Source Voltage Vds | 800V |
| Maximum Drain Source Resistance Rds | 2.5Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 60W |
| Typical Gate Charge Qg @ Vgs | 10.5nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.5V |
Key Features
- Supports a maximum continuous drain current of 3 A for robust performance.
- Features a maximum drain-source voltage rating of 800 V suitable for high-voltage applications.
- Designed with Enhancement mode channel for efficient switching.
- Compact TO-220 package with 3 pins, ideal for through-hole mounting.
- Exhibits a low maximum drain-source resistance of 2.5 Ω.
- Maximum power dissipation of 60 W allows high power handling capability.
- Operates safely between -55°C and 150°C temperature range.
- Low typical gate charge of 10.5 nC enables fast switching speeds.
Product Description
STMicroelectronics STP4N80K5 is an N-Channel MOSFET transistor from the MDmesh K5 series featuring SuperMESH5 technology. It delivers a continuous drain current of 3 A and can withstand a maximum drain-source voltage of 800 V, suitable for industrial electronics requiring high voltage and current handling. Packaged in a 3-pin TO-220 through-hole mounting type, this device offers reliable performance for power switching applications.
The transistor operates in enhancement mode and has a maximum drain-source resistance (Rds) of 2.5 Ω, ensuring efficient conduction with minimal losses. Its typical gate charge is 10.5 nC at rated gate voltage, allowing rapid switching important in power conversion circuits. With power dissipation rated at 60 W, it can handle substantial loads without overheating.
This MOSFET supports operation within a wide temperature range of -55°C to 150°C, suitable for demanding industrial, automotive, and power management environments. The gate-source voltage maximum of ±30 V provides stable control characteristics.
The device dimensions are compact, measuring 15.75 mm in height, 10.4 mm in length, and 4.6 mm in width. It is RoHS compliant and comes without automotive standard certification but remains ideal for diverse electronic implementations.
Supports a maximum continuous drain current of 3 A for robust performance. Features a maximum drain-source voltage rating of 800 V suitable for high-voltage applications. Designed with Enhancement mode channel for efficient switching.
Compact TO-220 package with 3 pins, ideal for through-hole mounting. Exhibits a low maximum drain-source resistance of 2.5 Ω. Maximum power dissipation of 60 W allows high power handling capability. Operates safely between -55°C and 150°C temperature range.
Low typical gate charge of 10.5 nC enables fast switching speeds. Maximum gate-source voltage spans -30 V to +30 V. Small dimensions with height 15.75 mm, length 10.4 mm, and width 4.6 mm.
This N-Channel MOSFET is widely used in industrial electronics, power supplies, motor control, HVAC systems, and other applications demanding reliable semiconductor switching devices.
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Frequently Asked Questions
The STMicroelectronics STP4N80K5 MOSFET supports a maximum continuous drain current of 3 A.
This model has a maximum drain-source voltage rating of 800 V, making it suitable for high-voltage applications.
It is packaged in a compact TO-220 format, which is ideal for through-hole mounting.
The maximum power dissipation for the STP4N80K5 is rated at 60 W, allowing for substantial load handling without overheating.
The typical gate charge at rated gate voltage is 10.5 nC, which enables fast switching speeds.
This MOSFET operates safely within a temperature range of -55°C to 150°C.
It exhibits a low maximum drain-source resistance of 2.5 Ω, ensuring efficient conduction with minimal losses.
The maximum gate-source voltage spans from -30 V to +30 V, providing stable control characteristics.
The dimensions of the STP4N80K5 are 15.75 mm in height, 10.4 mm in length, and 4.6 mm in width.
This model is an N-channel MOSFET designed for enhancement mode operation.
It is widely used in industrial electronics, power supplies, motor control, and HVAC systems, among other applications.
The STMicroelectronics STP4N80K5 is manufactured in India.
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