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Microchip N-Channel Depletion Mode MOSFET 120 mA 350 V 3-Pin TO-92 DN2535N3-G

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Microchip N-Channel Depletion Mode MOSFET 120 mA 350 V 3-Pin TO-92 DN2535N3-G

Name: Microchip N-Channel Depletion Mode MOSFET 120 mA 350 V 3-Pin TO-92 DN2535N3-G
Brand: Microchip
SKU: 410988
Price: 20.22 USD
Availability: InStock

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Category MOSFETs Brand Microchip Condition New

Specifications

Country of Origin	India
Brand	Microchip
Height	5.33mm
Length	5.2mm
Model	DN2535N3-G
Width	4.19mm
Mount Type	Through Hole
Series	DN2535
Maximum Operating Temperature	150°C
Package Type	TO-92
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	120mA
Maximum Drain Source Voltage Vds	350V
Maximum Drain Source Resistance Rds	25Ω
Channel Mode	Depletion
Maximum Power Dissipation Pd	1W
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	1.8V

Key Features

The device operates in depletion mode ensuring normally-on switching capabilities.
It features high input impedance and low input capacitance for efficient switching.
Maximum drain-source resistance is 25 Ω supporting low on-resistance operation.
Designed for through-hole mounting with a compact TO-92 package.
Operating temperature ranges from -55°C to 150°C for robust industrial use.
Maximum power dissipation is 1 W, suitable for low power applications.
Gate-source voltage tolerance is ±20 V ensuring versatility in circuit design.
Forward voltage of 1.8 V for reliable forward conduction.

Product Description

Microchip DN2535N3-G is an N-Channel Depletion Mode MOSFET designed for electronic applications requiring a high breakdown voltage of 350 V and a continuous drain current capacity of 120 mA. Packaged in a 3-pin TO-92 form, this transistor is suited for through-hole mounting on standard PCBs.

This depletion-mode MOSFET features low gate and input leakage currents, providing high input impedance, which contributes to fast switching speeds and low power loss. The device has a maximum drain-source resistance (Rds) of 25 Ω and 1 W power dissipation capability, enabling it to efficiently handle low power loads in various circuits.

Capable of operating in temperatures from -55°C up to 150°C, this MOSFET is designed for demanding environments and suitable for industrial, telecommunications, and laboratory use. The gate-source voltage tolerance of ±20 V offers flexibility for inclusion in both analog and digital circuits.

Typical applications include normally-on switches, solid-state relays, converters, linear amplifiers, constant current sources, and power supply circuits. The compact dimensions (height 5.33 mm, length 5.2 mm, width 4.19 mm) facilitate easy integration into printed circuit boards with through-hole mounting design.

The device exhibits low input capacitance and low leakage currents for efficient switching. Its fast switching speeds improve performance in telecommunications and power electronics applications. It is free from secondary breakdown, enhancing reliability and durability.

Highly suitable for use in solid state relays and normally-on switching applications. The TO-92 package provides ease of installation and thermal management.

Microchip’s DN2535N3-G is a reliable choice for engineers seeking a durable and efficient depletion-mode MOSFET transistor for various low power switching and amplification tasks. EnvMart offers this quality semiconductor component for your electronic component needs.

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