Vishay High-Voltage P-Channel MOSFET 1.8 A Continuous Drain Current 400 V Drain Source Voltage 50 W Power IRFR9310PBF

Vishay IRFR9310PBF is a high-voltage P-Channel MOSFET engineered for power-electronic switching applications requiring reliability and efficiency. Its 1.8 A continuous drain current combined with a 400 V drain-source voltage rating enables usage in moderate current, high-voltage circuits. The device is packaged in a TO-252 form factor, offering compact dimensions of 9.65 mm suitable for surface-mount and through-hole assembly, meeting diverse PCB design needs.

The MOSFET features a low maximum drain source resistance of 7Ω to minimize conduction losses, alongside a typical gate charge of 13nC which facilitates rapid gate drive transitions, enhancing switching efficiency. With a maximum power dissipation of 50 W, the IRFR9310PBF maintains thermal robustness in power stages under demanding loads.

Operating over a wide temperature span from -55°C to 150°C, this device is ideal for high-temperature industrial, automotive, and industrial control electronics applications. The single transistor configuration permits simple current sharing when devices are used in parallel arrangements. Compliance with RoHS standards ensures it meets environmental regulations for safer end-of-life disposal.

Functions include high-voltage polarity protection circuits, P-channel high-side switching in power supplies, and usage with gate drivers requiring devices with low gate charge. This MOSFET is suitable for industrial controls requiring thermal endurance and high-voltage capability. The device is manufactured in China and is subjected to strict quality controls for dependable performance.

Supports surface-mount and through-hole mounting for varied assembly methods. Maximum continuous drain current: 1.8 A for moderate load handling. Maximum drain source voltage: 400 V for high-voltage switching. Low maximum drain source resistance 7Ω to limit conduction losses.

Typical gate charge 13nC ensures fast switching capability. Maximum power dissipation 50 W to sustain thermal loads. Wide operating temperature range -55°C to 150°C tolerates harsh conditions. Single transistor configuration simplifies circuit design.

RoHS compliant for environmental safety. Made in China with quality manufacturing standards. Discover more high-quality electronic components like Vishay MOSFETs and other discrete semiconductors at EnvMart, the trusted industrial and electronics marketplace.