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Infineon HEXFET N-Channel MOSFET, 28 A, 150 V, 2-Pin DirectFET IRF6775MTRPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 680μm |
| Length | 4.85mm |
| Model | IRF6775MTRPBF |
| Width | 3.95mm |
| Mount Type | Surface |
| Series | HEXFET |
| Package Type | DirectFET |
| Pin Count | 2 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 28A |
| Maximum Drain Source Voltage Vds | 150V |
| Maximum Drain Source Resistance Rds | 56mΩ |
| Maximum Power Dissipation Pd | 89W |
| Typical Gate Charge Qg @ Vgs | 25nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.3V |
Key Features
- Utilizes latest silicon processing for low on-resistance and improved EMI performance.
- Dual sided cooling compatible for enhanced thermal management.
- Package type is DirectFET with 2 pins for reliable surface mounting.
- Maximum power dissipation of 89 W suitable for high power applications.
- Typical gate charge of 25 nC at 25 V gate-source voltage for efficient switching.
- Maximum gate source voltage rating of ±20 V ensures device robustness.
- Compact dimensions of 4.85 mm length, 3.95 mm width, and 680 µm height.
- Forward voltage of 1.3 V supports high efficiency operation.
Product Description
Infineon's IRF6775MTRPBF is a high-performance HEXFET N-channel MOSFET designed for demanding applications requiring efficient power switching with a continuous drain current rating of 28 A and maximum drain source voltage of 150 V. The device features a low on-resistance achieved through advanced silicon processing techniques to optimize performance and thermal characteristics.
Designed specifically for surface mount technology with a DirectFET 2-pin package, the MOSFET supports dual sided cooling to enhance heat dissipation in compact electronic assemblies. Its typical gate charge of 25 nC at a gate-source voltage of 25 V ensures rapid and efficient switching with minimal loss.
The device maintains robustness with a maximum gate source voltage of ±20 V and a maximum power dissipation of 89 W, making it suitable for industrial, automotive, and audio amplifier Class-D applications where efficiency and reliability are critical.
Physical dimensions of 4.85 mm in length, 3.95 mm in width, and 680 µm in height make this MOSFET a compact solution for high-density circuit designs. It exhibits a forward voltage of 1.3 V contributing to efficient current conduction with low losses.
Infineon’s HEXFET technology ensures improved electromagnetic interference performance by reducing voltage ringing caused by fast current transients, an important consideration in audio amplifier and power management circuits.
Utilizes advanced low on-resistance silicon processing for improved efficiency. Compatible with existing surface mount assembly techniques. Lead-free construction supporting environmental compliance. Highly suitable for industrial, automotive, audio amplifier, and power conversion applications.
Compact DirectFET package with dual sided cooling capability.
This product is an ideal choice for engineers requiring a reliable, high-current N-channel MOSFET with low losses and superior thermal performance. Browse more MOSFETs and power semiconductor solutions on EnvMart for your electronic design needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 28 A.
This unit has a maximum drain-source voltage rating of 150 V.
The typical gate charge at a gate-source voltage of 25 V is 25 nC.
It can handle a maximum power dissipation of 89 W.
The dimensions are 4.85 mm in length, 3.95 mm in width, and 680 µm in height.
This model uses a DirectFET package type with 2 pins for surface mounting.
The maximum gate-source voltage rating is ±20 V, ensuring device robustness.
The forward voltage is 1.3 V, which supports efficient operation.
Yes, it supports dual sided cooling for enhanced thermal management.
It is suitable for industrial, automotive, and audio amplifier Class-D applications.
The maximum drain-source resistance is 56 mΩ.
The country of origin for this MOSFET is India.
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