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Vishay N-Channel MOSFET, 410 A, 30 V Depletion Mode, 4-Pin PowerPAK SO-8L Package SQJ170ELP-T1_GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Length | 6.15mm |
| Model | SQJ170ELP-T1_GE3 |
| Width | 4.9mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 125°C |
| Package Type | PowerPAK SO-8L |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 410A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 0.02Ω |
| Channel Mode | Depletion |
| Maximum Power Dissipation Pd | 255W |
| Typical Gate Charge Qg @ Vgs | 43nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.1V |
Key Features
- This depletion mode MOSFET provides robust electrical performance suitable for high power density applications.
- Surface mount with 4-pin configuration ensures compact PCB layout.
- Maximum power dissipation of 255 W supports demanding power requirements.
- Operates reliably within a wide temperature range from -55°C to 125°C.
- AEC-Q101 qualified for automotive industry standards compliance.
- Typical gate charge of 43 nC at gate-source voltage supports efficient switching.
- Low on-resistance of 0.02 Ω reduces conduction losses.
- Forward voltage of 1.1 V supports efficient current flow.
Product Description
Vishay SQJ170ELP-T1_GE3 N-Channel MOSFET is a high-performance discrete semiconductor device designed for demanding power switching applications. It features a depletion mode channel efficiently handling maximum continuous drain currents up to 410 A with a maximum drain-source voltage rating of 30 V, making it suitable for industrial, automotive, and high power density electronics.
The device comes in a compact 4-pin PowerPAK SO-8L surface mount package, enabling space-saving PCB layouts and enhanced thermal performance. With a maximum power dissipation rating of 255 W, the MOSFET supports high current loads while maintaining stability across an extended operating temperature range from -55°C to 125°C. This wide thermal range ensures reliable performance in harsh environmental conditions.
Its AEC-Q101 qualification verifies compliance with strict automotive industry standards, ideal for use in automotive electronics requiring high reliability. The typical gate charge is 43 nC at gate-source voltage, enabling efficient switching characteristics that reduce switching losses. The MOSFET exhibits a very low typical drain-source resistance (Rds) of 0.02 Ω, minimizing conduction losses and improving overall efficiency.
Its forward voltage drop of 1.1 V supports effective current conduction with low voltage loss. The device's dimensions (6.15 mm length and 4.9 mm width) complement compact system designs and enhance thermal dissipation. This MOSFET is highly applicable in industrial power management, motor drives, power converters, battery management systems, telecommunications, and automotive power electronics.
The PowerPAK SO-8L packaging aids in heat dissipation for sustained high-power applications. With surface mount technology compatibility, it integrates seamlessly into modern printed circuit assemblies.
This MOSFET supports high current density industrial and automotive applications. Its depletion mode channel provides a normally-on device feature for specialized circuit designs. Enhanced thermal management is enabled via the PowerPAK SO-8L package design.
Wide operating temperature range ensures robust performance in varying environmental conditions. Recognition under AEC-Q101 automotive standard ensures suitability for automotive electronics. Explore the Electronics & Electricals category at EnvMart for this Vishay SQJ170ELP-T1_GE3 N-Channel MOSFET and other high-performance discrete semiconductor components.
Explore more products in our MOSFETs category.
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Frequently Asked Questions
The maximum continuous drain current for this model is 410 A.
This MOSFET has a maximum drain-source voltage rating of 30 V.
It can handle a maximum power dissipation of 255 W.
The typical gate charge is 43 nC at the gate-source voltage.
The typical drain-source resistance (Rds) is 0.02 Ω, which helps minimize conduction losses.
The dimensions of the package are 6.15 mm in length and 4.9 mm in width.
It operates reliably within a temperature range from -55°C to 125°C.
Yes, it is AEC-Q101 qualified, ensuring compliance with automotive industry standards.
This device features a depletion mode N-channel.
The forward voltage drop is 1.1 V, which supports efficient current conduction.
The maximum gate-source voltage for this model is 20 V.
This model uses a surface mount configuration.
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