STMicroelectronics STripFET H7 N-Channel MOSFET, 30 A, 100 V Enhancement, 8-Pin PowerFLAT STL30N10F7

STMicroelectronics STL30N10F7 is part of the advanced STripFET™ H7 series of N-Channel MOSFETs optimized for power electronics requiring up to 30 A drain current and 100 V drain-source voltage.

This device features ultra-low typical gate charge (14 nC) and low on-resistance (35 mΩ) resulting in enhanced efficiency in power switching circuits. Packaged in a compact 8-pin PowerFLAT surface mount package with dimensions 6.35 mm length, 5.4 mm width, and 0.95 mm height, it enables high-density PCB designs.

Designed to operate under harsh conditions, the MOSFET supports a wide operation temperature range from -55°C to 175°C and a gate-source voltage range from -20 V to +20 V, making it suitable for robust automotive and industrial applications.

The MOSFET has a maximum power dissipation of 75 W and a forward voltage of 1.1 V, providing reliable performance in power conversion, motor control, and voltage regulation.

Common applications include power management modules, industrial drives, automotive power supplies, and DC-DC converters. As a surface-mounted semiconductor, it facilitates automated assembly in manufacturing environments.

Ultra-low gate charge for reduced switching losses. Low on-resistance improves power efficiency. Wide operating temperature range for demanding environments. Compact surface mount PowerFLAT package for high-density boards.

High maximum power dissipation enables heavy power loads. Supports both automotive and industrial electronics use cases. Part of the trusted STMicroelectronics STripFET H7 series for quality and reliability. Explore more power semiconductor products from STMicroelectronics at EnvMart to enhance your project's performance and reliability.