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STMicroelectronics MDmesh M2 N-Channel Power MOSFET, 32 A, 650 V, Enhancement Mode, TO-247 Package STW40N65M2

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STMicroelectronics MDmesh M2 N-Channel Power MOSFET, 32 A, 650 V, Enhancement Mode, TO-247 Package STW40N65M2

Name: STMicroelectronics MDmesh M2 N-Channel Power MOSFET, 32 A, 650 V, Enhancement Mode, TO-247 Package STW40N65M2
Brand: STMicroelectronics
SKU: 383902
Price: 7.41 USD
Availability: InStock

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Category Power MOSFET Brand STMicroelectronics Condition New

Specifications

Country of Origin	China
Brand	STMicroelectronics
Height	20.15mm
Length	15.75mm
Model	STW40N65M2
Width	5.15mm
Mount Type	Through Hole
Series	MDmesh M2
Maximum Operating Temperature	150°C
Package Type	TO-247
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	32A
Maximum Drain Source Voltage Vds	650V
Maximum Drain Source Resistance Rds	99mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	250W
Typical Gate Charge Qg @ Vgs	56.5nC
Maximum Gate Source Voltage Vgs	-25, +25V
Forward Voltage Vf	1.6V

Key Features

Features enhancement mode channel operation for reliable switching.
Maximum continuous drain current of 32 amperes for high power handling.
Maximum drain-source voltage rating of 650 volts for robust performance.
Low on-state resistance of 99 milliohms to minimize conduction losses.
Package type is a through-hole, 3-pin TO-247 suitable for easy mounting.
Typical gate charge of 56.5 nanocoulombs at 6 volts gate-source voltage.
Maximum power dissipation of 250 watts for efficient thermal handling.
High maximum operating temperature up to 150 degrees Celsius.

Product Description

STMicroelectronics STW40N65M2 is a high-voltage MDmesh™ M2 series N-channel power MOSFET designed for efficient power switching and conversion. This device features an enhancement mode channel designed for use in resonant-type switching supplies such as LLC converters, offering excellent output capacitance and low gate charge characteristics that reduce switching losses.

The MOSFET is rated for a maximum continuous drain current of 32 amperes and can withstand drain-source voltages of up to 650 volts. With a low maximum drain-source resistance of 99 milliohms, it ensures minimal conduction loss, improving device efficiency. It is housed in a 3-pin through-hole TO-247 package, allowing for easy installation on printed circuit boards.

The device supports a maximum power dissipation of 250 watts and a maximum operating temperature of 150 degrees Celsius, making it suitable for demanding industrial, commercial, and electronic system applications. Its typical gate charge of 56.5 nanocoulombs at a gate-source voltage of 6 volts facilitates fast switching, enhancing performance in power supply designs.

Physical dimensions are compact with length 15.75 mm, width 5.15 mm, and height 20.15 mm, enabling space-efficient designs. The product is manufactured in China under the STMicroelectronics brand and is intended for use in high-performance power electronics equipment including industrial controls, power converters, and inverter systems.

Enhancement mode N-channel MOSFET ideal for high-voltage switching applications. 32 A maximum continuous drain current rating. 650 V drain-source voltage rating. Low on-resistance of 99 mΩ for improved efficiency. TO-247 through-hole package with 3 pins for reliable mounting.

250 W power dissipation capability for thermal management. 56.5 nC typical gate charge for fast switching operation. Maximum operating temperature up to 150°C for durability. Compact size: 15.75 x 5.15 x 20.15 mm (L x W x H).

This Power MOSFET is suitable for use in industrial automation, power supply design, motor drives, and other electronic power control systems. Explore the Electronics & Electricals category at EnvMart to find a wide range of STMicroelectronics semiconductor devices suited for your application needs.