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STMicroelectronics MDmesh M2 N-Channel Power MOSFET, 600 V, 12 A, Enhancement Mode, TO-220 Package STF16N60M2

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STMicroelectronics MDmesh M2 N-Channel Power MOSFET, 600 V, 12 A, Enhancement Mode, TO-220 Package STF16N60M2

Name: STMicroelectronics MDmesh M2 N-Channel Power MOSFET, 600 V, 12 A, Enhancement Mode, TO-220 Package STF16N60M2
Brand: STMicroelectronics
SKU: 387061
Price: 1.95 USD
Availability: InStock

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Category Power MOSFET Brand STMicroelectronics Condition New

Specifications

Country of Origin	China
Brand	STMicroelectronics
Height	16.4mm
Length	10.4mm
Model	STF16N60M2
Width	4.6mm
Mount Type	Through Hole
Series	MDmesh M2
Maximum Operating Temperature	150°C
Package Type	TO-220
Minimum Operating Temperature	-55°C
Pin Count	3
Automotive Standard	AEC-Q101
Channel Type	N
Maximum Continuous Drain Current Id	12A
Maximum Drain Source Voltage Vds	600V
Maximum Drain Source Resistance Rds	320mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	25W
Typical Gate Charge Qg @ Vgs	19nC
Maximum Gate Source Voltage Vgs	-25, +25V
Forward Voltage Vf	1.5V

Key Features

The MDmesh M2 series provides low gate charge and excellent output capacitance for high efficiency.
Enhancement mode channel operation allows reliable switching performance.
The device supports a maximum power dissipation of 25 W for robust thermal handling.
Designed with 3-pin through-hole mounting for easy PCB integration.
Typical gate charge is 19 nC at Vgs, minimizing switching losses.
Maximum operating temperature is rated up to 150°C for demanding applications.
Package dimensions are compact with a length of 10.4 mm, width of 4.6 mm, and height of 16.4 mm.
Meets automotive standard AEC-Q101, suitable for automotive electronics.

Product Description

STMicroelectronics STF16N60M2 is a high-voltage N-channel power MOSFET from the MDmesh M2 series featuring enhancement mode operation. It is rated for a maximum continuous drain current of 12 A and drain-source voltage of 600 V. Packaged in a robust TO-220 3-pin through-hole format, this MOSFET is suitable for various industrial and automotive power switching applications.

The MDmesh M2 technology incorporates low gate charge and excellent output capacitance characteristics, making it ideal for resonant-type switching power supplies such as LLC converters. The device's typical gate charge of 19 nC at a gate-source voltage enables efficient switching with minimal losses, increasing overall power efficiency.

This MOSFET supports a maximum power dissipation of 25 W, with a maximum operating temperature of 150°C and a minimum operating temperature down to -55°C, ensuring reliable performance across a wide thermal range. The compact mechanical dimensions include a length of 10.4 mm, width of 4.6 mm, and height of 16.4 mm, facilitating integration in space-constrained designs.

The STF16N60M2 also complies with automotive standard AEC-Q101, making it suitable for automotive electronics and other demanding industrial applications. The device operates in enhancement mode with a low forward voltage drop of approximately 1.5 V and a maximum drain-source resistance (Rds(on)) of 320 milliohms.

This Power MOSFET is designed for industrial, automotive, manufacturing, and commercial electronics applications requiring efficient high-voltage power switching and robust thermal performance.

The MDmesh M2 series offers low gate charge for efficient switching. Through-hole TO-220 package ensures easy mounting and thermal dissipation. Robust electrical ratings of 600 V drain-source voltage and 12 A current. Meets the automotive quality standard AEC-Q101.

Compact dimensions support versatile PCB layouts. Wide operating temperature range from -55°C to 150°C. Supports various industrial power electronics and automotive systems. Explore additional STMicroelectronics power semiconductors and discrete components in the EnvMart catalog for your next industrial electronics solution.